Datasheet

= STATEOFCHARGE% x 2.56Battery Low %
NFW
=
2
Near Full
bq2060A
SLUS500D –OCTOBER 2001– REVISED OCTOBER 2011 www.ti.com
Table 10. EEPROM Memory Map (continued)
Data Data
EEPROM NiMH Li-Ion
Name Chemistry
Address Example Example
MSB LSB MSB LSB
0x58 0x59 Reserved — 0 — 00 0 — 00
0x5a 0x5b Reserved — 0 — 00 0 — 00
0x5c 0x5d Reserved — 0 00 00 0 00 00
0x5e 0x5f VFC Offset*
(1)
Li-Ion, nickel 0 00 00 0 00 00
0x60 VFC Offset*
(1)
Li-Ion, nickel 0 — 00 0 — 00
0x61 Temperature Offset*
(1)
Li-Ion, nickel 0 — 00 0 — 00
0x62 ADC Offset*
(1)
Li-Ion, nickel 0 — 00 0 — 00
Cell 2 Calibration Factor*
(1)
Li-Ion — — — 0 — 00
0x63
Efficiency Temperature Compensation Nickel 0.25% — 20 — — —
Cell 3 Calibration Factor*
(1)
Li-Ion — — — 0 — 00
0x64
Efficiency Drop Off Percentage Nickel 96% — a0 — — —
Cell 4 Calibration Factor*
(1)
Li-Ion — — — 0 — 00
0x65
Efficiency Reduction Rate Nickel 1% — 50 — — —
0x66 0x67 ADC Voltage Gain*
(2)
Li-Ion, nickel 16 : 1 4e 20 16 : 1 4e 20
0x68 0x69 ADC Sense Resistor Gain*
(2)
Li-Ion, nickel 0.05 Ω 30 d4 0.05 Ω 30 d4
0x6a 0x6b VFC Sense Resistor Gain*
(2)
Li-Ion, nickel 0.05 Ω 20 00 0.05 Ω 20 00
0x6c 0x6d VOC 25% Li-Ion, nickel 11500 mV d3 14 10550 mV d6 ca
0x6e 0x6f VOC 50% Li-Ion, nickel 12500 mV cf 2c 10750 mV d6 02
0x70 0x71 VOC 75% Li-Ion, nickel 13500 mV cb 44 11200 mV d4 40
0x72 0x73 EDVF/EDV0 Li-Ion, nickel 9500 mV 25 1c 10265 mV 28 19
0x74 0x75 EMF/ EDV1 Li-Ion, nickel 10000 mV 27 10 11550 2d 1e
0x76 0x77 EDV T0 Factor Li-Ion, nickel 0 00 00 4475 11 7b
C1 = 0
0x78 0x79 EDV C1/C0 Factor/EDV2 Li-Ion, nickel 10500 mV 29 04 00 eb
C0 = 235
0x7a 0x7b EDV R0 Factor Li-Ion, nickel 0 00 00 5350 14 e6
0x7c 0x7d EDV R1 Factor Li-Ion, nickel 0 — 00 250 00 fa
0x7e 0x7f Check Byte 2 Li-Ion, nickel 42330 a5 5a 42330 a5 5a
(1) Reserved locations must be set as shown. Locations marked with an asterisk are calibration values that can be adjusted for maximum
accuracy. For these locations the table shows the appropriate default or initial setting.
(2) Reserved locations must be set as shown. Locations marked with an asterisk are calibration values that can be adjusted for maximum
accuracy. For these locations the table shows the appropriate default or initial setting.
EDV Thresholds and Near-Full Percentage
The bq2060A uses three pack voltage thresholds to provide voltage-based warnings of low battery capacity. The
bq2060A uses the values stored in EEPROM for the EDV0, EDV1, and EDV2 values or calculates the three
thresholds from a base value and the temperature, capacity, and rate adjustment factors stored in EEPROM. If
EDV compensation is disabled then EDV0, EDV1, and EDV2 are stored directly in mV in EE 0x72–0x73, EE
0x74–0x75, and EE 0x78–0x79, respectively.
For capacity correction at EDV2, Battery Low % EE 0x54 can be set at a desired state-of-charge,
STATEOFCHARGE%, in the range of 5 to 20%. Typical values for STATEOFCHARGE% are 7–12%
representing 7–12% capacity.
(7)
The bq2060A updates FCC if a qualified discharge occurs from a near-full threshold to EDV2. The desired
near-full threshold window, NFW (mAh), is programmed in Near Full in EE 0x55.
(8)
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