Datasheet

AMC1203
www.ti.com SBAS427C –FEBRUARY 2008– REVISED JUNE 2011
THERMAL CHARACTERISTICS
(1)
Over recommended operating conditions, unless otherwise noted.
PARAMETER SOP-8 GULL-WING SOP-8 SOIC-16 UNIT
Low-K 127 246 104 °C/W
θ
JA
Junction-to-air thermal resistance
High-K 78 164 58 °C/W
θ
JC
Junction-to-case thermal resistance 61 32 25 °C/W
P
D
Device power dissipation (max) 110 110 110 mW
(1) Tested in accordance with the Low-K or High-K thermal metric definitions of EIA/JESD51-3 for leaded surface mount packages.
RECOMMENDED OPERATING CONDITIONS
Over operating free-air temperature range, unless otherwise noted.
PARAMETER MIN NOM MAX UNIT
Supply voltage, V
DD1
to GND1 or V
DD2
to GND2 4.5 5.0 5.5 V
Common-mode operating range, V
CM
0 V
DD1
V
Differential input voltage, (V
IN+
) – (V
IN–
) –280 280 mV
Operating junction temperature range, T
J
(see the Thermal Characteristics table) –40 +125 °C
DISSIPATION RATINGS
(1)
DERATING FACTOR T
A
≤ +25°C T
A
= +70°C T
A
= +85°C T
A
= +125°C
PACKAGE ABOVE T
A
= +25°C POWER RATING POWER RATING POWER RATING POWER RATING
SOP-8 Gull-Wing 7.9mW/°C 984mW 629mW 511mW 354mW
SOP-8 4.1mW/°C 508mW 325mW 264mW 182mW
SOIC-16 9.6mW/°C 1201mW 769mW 625mW 432mW
(1) Based on Low-K thermal resistance.
REGULATORY INFORMATION
VDE UL
Certified according to IEC 60747-5-2 Recognized under 1577 Component Recognition Program
File Number: 40014131 File Number: E181974
IEC 60747-5-2 ISOLATION CHARACTERISTICS
Over recommended operating conditions, unless otherwise noted.
PARAMETER TEST CONDITIONS VALUE UNIT
V
IORM
Maximum working insulation voltage 560 V
Method A, after input or safety test (subgroup 2 or 3),
672 V
V
PD
= V
IORM
× 1.2, t = 10s, partial discharge < 5pC
Method A, after environmental test (subgroup 1),
V
PD
Input to output test voltage 896 V
V
PD
= V
IORM
× 1.6, t = 10s, partial discharge < 5pC
Method B1, routine and initial test, V
PD
= V
IORM
× 1.875,
1050 V
100% production test with t = 1s, partial discharge < 5pC
V
IOTM
Transient overvoltage t = 60s 4000 V
R
S
Isolation resistance V
IO
= 500V at T
S
> 10
9
Ω
PD Pollution degree 2
Copyright © 2008–2011, Texas Instruments Incorporated 3