Datasheet

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AM3359, AM3358, AM3357
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SPRS717E –OCTOBER 2011–REVISED JANUARY 2013 www.ti.com
Table 3-13. Power-Supply Decoupling Capacitor Characteristics (continued)
PARAMETER TYP UNIT
C
VDDSHV4
(5)
10.02 μF
C
VDDSHV5
(5)
10.02 μF
C
VDDSHV6
(3)
10.06 μF
(1) Not available on the ZCE package.
(2) Typical values consist of 1 cap of 10 μF and 4 caps of 10 nF.
(3) Typical values consist of 1 cap of 10 μF and 6 caps of 10 nF.
(4) For more details on decoupling capacitor requirements for the mDDR(LPDDR), DDR2, DDR3, DDR3L memory interface, see
Section 5.5.2.1.2.6 and Section 5.5.2.1.2.7 when using mDDR(LPDDR) memory devices, Section 5.5.2.2.2.6 and Section 5.5.2.2.2.7
when using DDR2 memory devices, or Section 5.5.2.3.3.6 and Section 5.5.2.3.3.7 when using DDR3 or DDR3L memory devices.
(5) Typical values consist of 1 cap of 10 μF and 2 caps of 10 nF.
3.4.2 Output Capacitors
Internal low dropout output (LDO) regulators require external capacitors to stabilize their outputs. These
capacitors should be placed as close as possible to the respective terminals of the AM335x device. Table 3-14
summarizes the LDO output capacitor recommendations.
Table 3-14. Output Capacitor Characteristics
PARAMETER TYP UNIT
C
CAP_VDD_SRAM_CORE
(1)
1 μF
C
CAP_VDD_RTC
(1)(2)
1 μF
C
CAP_VDD_SRAM_MPU
(1)
1 μF
C
CAP_VBB_MPU
(1)
1 μF
(1) LDO regulator outputs should not be used as a power source for any external components.
(2) The CAP_VDD_RTC terminal operates as an input to the RTC core voltage domain when the RTC_KLDO_ENn terminal is high.
92 Device Operating Conditions Copyright © 2011–2013, Texas Instruments Incorporated
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