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SPRS717E –OCTOBER 2011–REVISED JANUARY 2013
3.3 DC Electrical Characteristics
Table 3-11 summarizes the dc electrical characteristics.
Note: The interfaces or signals described in Table 3-11 correspond to the interfaces or signals available in
multiplexing mode 0. All interfaces or signals multiplexed on the terminals described in Table 3-11 have the same
dc electrical characteristics.
Table 3-11. DC Electrical Characteristics Over Recommended Ranges of Supply Voltage and Operating
Temperature (Unless Otherwise Noted)
PARAMETER MIN NOM MAX UNIT
DDR_RESETn,DDR_CSn0,DDR_CKE,DDR_CK,DDR_CKn,DDR_CASn,DDR_RASn,DDR_WEn,DDR_BA0,DDR_BA1,DDR_BA2,DDR_A
0,DDR_A1,DDR_A2,DDR_A3,DDR_A4,DDR_A5,DDR_A6,DDR_A7,DDR_A8,DDR_A9,DDR_A10,DDR_A11,DDR_A12,DDR_A13,DDR_A
14,DDR_A15,DDR_ODT,DDR_D0,DDR_D1,DDR_D2,DDR_D3,DDR_D4,DDR_D5,DDR_D6,DDR_D7,DDR_D8,DDR_D9,DDR_D10,DDR_
D11,DDR_D12,DDR_D13,DDR_D14,DDR_D15,DDR_DQM0,DDR_DQM1,DDR_DQS0,DDR_DQSn0,DDR_DQS1,DDR_DQSn1 pins
(mDDR - LVCMOS mode)
0.65 *
V
IH
High-level input voltage V
VDDS_DDR
0.35 *
V
IL
Low-level input voltage V
VDDS_DDR
V
HYS
Hysteresis voltage at an input 0.07 0.25 V
High level output voltage, driver enabled, pullup VDDS_DDR -
V
OH
I
OH
= 8 mA V
or pulldown disbaled 0.4
Low level output voltage, driver enabled, pullup
V
OL
I
OL
= 8 mA 0.4 V
or pulldown disbaled
Input leakage current, Receiver disabled, pullup or pulldown
10
inhibited
I
I
µA
Input leakage current, Receiver disabled, pullup enabled -240 -80
Input leakage current, Receiver disabled, pulldown enabled 80 240
Total leakage current through the terminal connection of a driver-
I
OZ
receiver combination that may include a pullup or pulldown. The 10 µA
driver output is disabled and the pullup or pulldown is inhibited.
DDR_RESETn,DDR_CSn0,DDR_CKE,DDR_CK,DDR_CKn,DDR_CASn,DDR_RASn,DDR_WEn,DDR_BA0,DDR_BA1,DDR_BA2,DDR_A
0,DDR_A1,DDR_A2,DDR_A3,DDR_A4,DDR_A5,DDR_A6,DDR_A7,DDR_A8,DDR_A9,DDR_A10,DDR_A11,DDR_A12,DDR_A13,DDR_A
14,DDR_A15,DDR_ODT,DDR_D0,DDR_D1,DDR_D2,DDR_D3,DDR_D4,DDR_D5,DDR_D6,DDR_D7,DDR_D8,DDR_D9,DDR_D10,DDR_
D11,DDR_D12,DDR_D13,DDR_D14,DDR_D15,DDR_DQM0,DDR_DQM1,DDR_DQS0,DDR_DQSn0,DDR_DQS1,DDR_DQSn1 pins
(DDR2 - SSTL mode)
V
IH
High-level input voltage DDR_VREF + V
0.125
V
IL
Low-level input voltage DDR_VREF - V
0.125
V
HYS
Hysteresis voltage at an input NA V
V
OH
High-level output voltage, driver enabled, pullup I
OH
= 8 mA VDDS_DDR - V
or pulldown disbaled 0.4
V
OL
Low-level output voltage, driver enabled, pullup I
OL
= 8 mA 0.4 V
or pulldown disbaled
Input leakage current, Receiver disabled, pullup or pulldown
10
inhibited
I
I
µA
Input leakage current, Receiver disabled, pullup enabled -240 -80
Input leakage current, Receiver disabled, pulldown enabled 80 240
I
OZ
Total leakage current through the terminal connection of a driver- 10 µA
receiver combination that may include a pullup or pulldown. The
driver output is disabled and the pullup or pulldown is inhibited.
Copyright © 2011–2013, Texas Instruments Incorporated Device Operating Conditions 87
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