Datasheet
AFE5808A
SLOS729B –OCTOBER 2011–REVISED APRIL 2012
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ELECTRICAL CHARACTERISTICS (continued)
AVDD_5 V = 5 V, AVDD = 3.3 V, AVDD_ADC = 1.8 V, DVDD = 1.8 V, AC-coupled with 0.1 µF at INP and bypassed to
ground with 15 nF at INM, No active termination, V
CNTL
= 0 V, f
IN
= 5 MHz, LNA = 18 dB, PGA = 24 dB, 14Bit, sample
rate = 65 MSPS, LPF Filter = 15 MHz, low noise mode, V
OUT
= –1 dBFS, internal 500 Ω CW feedback resistor, CMOS CW
clocks, ADC configured in internal reference mode, single-ended VCNTL mode, VCNTLM = GND, at ambient temperature
T
A
= 25°C, unless otherwise noted. Min and max values are specified across full-temperature range with AVDD_5 V = 5 V,
AVDD = 3.3 V, AVDD_ADC = 1.8 V, DVDD = 1.8 V
PARAMETER TEST CONDITION MIN TYP MAX UNITS
ADC Power dissipation/CH 65 MSPS 59 69 mW/CH
50 MSPS 51
40 MSPS 46
20 MSPS 35
Power dissipation in power down mode PDN_VCA = High, PDN_ADC = High 25 mW/CH
Complete power-down PDN_Global=High 0.6
Power-down response time Time taken to enter power down 1 µs
Power-up response time VCA power down 2µs+1% of PDN
time
µs
ADC power down 1
Complete power down 2.5 ms
fin = 5 MHz, at 50 mVpp noise at 1 KHz on supply
(3)
–65 dBc
Power supply modulation ratio, AVDD and
AVDD_5V
fin = 5 MHz, at 50 mVpp noise at 50 KHz on supply
(3)
–65 dBc
Power supply rejection ratio f = 10 kHz,VCNTL = 0 V (high gain), AVDD –40 dBc
f = 10 kHz,VCNTL = 0 V(high gain), AVDD_5V –55 dBc
f = 10 kHz,VCNTL = 1 V (low gain), AVDD –50 dBc
(3) PSMR specification is with respect to input signal amplitude.
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