Datasheet

AFE031
www.ti.com SBOS531D –AUGUST 2010–REVISED MAY 2012
ELECTRICAL CHARACTERISTICS: Power Amplifier (PA)
At T
J
= +25°C, PA_V
S
= 16 V, V
AVDD
= V
DVDD
= 3.3 V, and 10 kΩ connected to PA_ISET (pin 46), unless otherwise noted.
AFE031
PARAMETER CONDITIONS MIN TYP MAX UNIT
Input
PA_V
S
+
Input voltage range GND – 0.1 V
0.1
Input resistance R
I
20 kΩ
Frequency Response
Bandwidth BW I
LOAD
= 0 670 kHz
Slew rate SR 10-V step 19 V/μs
Full-power bandwidth V
OUT
= 10 V
PP
300 kHz
AC PSRR f = 50 kHz 14 dB
Output
I
O
= 300 mA, sourcing 0.3 1 V
Voltage output swing from
V
O
PA_V
S
I
O
= 1.5 A, sourcing 1.7 2 V
I
O
= 300 mA, sinking 0.3 1 V
Voltage output swing from
V
O
PA_Gnd
I
O
= 1.5 A, sinking 1.3 2 V
Maximum continuous current, dc I
O
7.5 kΩ connected to PA_I
SET
1.5 A
Maximum peak current, ac T
J
= –40°C to +125°C; f = 50 kHz 1.7 A
Output resistance R
O
I
O
= 1.5 A 0.1 Ω
PA disabled
Output impedance f = 100 kHz, REF1 enabled 145 ll 120 kΩ ll pF
Output current limit range ±0.4 to ±1.5 A
I
LIM
= 20 kΩ • [1.2 V/(R
SET
+ 5 kΩ)] A
Current limit equation
Solved for R
SET
(Current Limit) R
SET
= [(20 kΩ • 1.2 V/I
LIM
) – 5 kΩ] Ω
Gain R
LOAD
= 1 kΩ
Nominal gain G 6.5 V/V
Gain error –1 0.1 +1 %
Gain error drift T
J
= –40°C to +125°C ±1 ppm/°C
TSENSE Diode
Diode ideality factor η 1.033
Thermal Shutdown
Junction temperature at shutdown +160 °C
Hysteresis 15 °C
Return to normal operation +145 °C
Copyright © 2010–2012, Texas Instruments Incorporated 5
Product Folder Link(s): AFE031