Datasheet

AFE030
www.ti.com SBOS588A –DECEMBER 2011– REVISED DECEMBER 2011
ELECTRICAL CHARACTERISTICS: Power Amplifier (PA)
At T
J
= +25°C, PA_V
S
= 16 V, V
AVDD
= V
DVDD
= 3.3 V, and PA_ISET (pin 46) connected to ground, unless otherwise noted.
AFE030
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
Input voltage range GND – 0.1 PA_V
S
+ 0.1 V
R
I
Input resistance 20 kΩ
FREQUENCY RESPONSE
BW Bandwidth I
LOAD
= 0 670 kHz
SR Slew rate 10-V step 19 V/μs
Full-power bandwidth V
OUT
= 10 V
PP
300 kHz
AC PSRR f = 50 kHz 14 dB
OUTPUT
I
O
= 300 mA, sourcing 0.3 1 V
From PA_V
S
I
O
= 1.0 A, sourcing 1 1.5 V
Voltage output
V
O
swing
I
O
= 300 mA, sinking 0.3 1 V
From PA_Gnd
I
O
= 1.0 A, sinking 1 1.5 V
PA_ISET (pin 46) connected to
I
O
Maximum continuous current, dc 1.0 A
ground
Maximum peak current, ac T
J
= –40°C to +125°C, f = 50 kHz 1.0 A
R
O
Output resistance I
O
= 1.0 A 0.1 Ω
Output impedance, f = 100 kHz,
PA disabled 145 ll 120 kΩ ll pF
REF1 enabled
Output current limit range ±0.4 to ±1.0 A
I
LIM
= 20 k × [1.2 V/(R
SET
+ 15 kΩ)] A
Current limit equation
Solved for R
SET
(current limit) R
SET
= [(20 k × 1.2 V/I
LIM
) – 15 kΩ] Ω
GAIN (R
LOAD
= 1 kΩ)
G Nominal gain 6.5 V/V
Gain error –1 0.1 +1 %
Gain error drift T
J
= –40°C to +125°C ±1 ppm/°C
TSENSE DIODE
η Diode ideality factor 1.033
THERMAL SHUTDOWN
Junction temperature at shutdown +165 °C
Hysteresis 20 °C
Return to normal operation +145 °C
Copyright © 2011, Texas Instruments Incorporated 5
Product Folder Link(s): AFE030