Datasheet

ADS8556/7/8
TopView
To
BVDD
ToAVDD
1
mF
To
HVSS/HVDD
0.1 Fm
ToAVDD ToAVDD
To
AVDD
0.1 Fm
ToAVDD
0.1
mF
0.1
mF
0.1
mF
0.1
mF
ToA DVD
0.1 Fm
10 Fm
0.1 Fm
10 Fm
LEG DEN
TOPlayer;copperpourandtraces
Lower layer;AGNDarea
Lower layer;BGNDarea
Via
10 Fm10 Fm10 Fm
AVDD
AVDD
48
45
AGND
AGND
42
AVDD
AVDD
39
AGND
AGND
36
AVDD
AVDD
33
64 63 62 61
AVDD
AGND
58
AGND
56
AGND
54
AGND AGND
AVDD
AGND
1
2
3
4
7
BGND
6
5
BVDD
10
11
12
15
16
14
13
17
18 19 20 23 29
24
AVDD
27
AGND
HVSS
HVDD
AGND
28
21 22
0.1
mF
0.1
mF
AVDDSource
10
mF
ToDUT
0.1 Fm
51
0.47 Fm
ADS8556
ADS8557
ADS8558
SBAS404B –OCTOBER 2006– REVISED JANUARY 2012 www.ti.com
(1) All 0.1μF, 0.47μF, and 1μF capacitors should be placed as close to the ADS8556/7/8 as possible.
(2) All 10μF capacitors should be close to the device but without compromising the placement of the smaller capacitors.
Figure 43. Layout Recommendation
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