Datasheet
ADS8519
SLAS462D –JUNE 2007–REVISED SEPTEMBER 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
(1)
MINIMUM NO MINIMUM SPECIFIED
INL MISSING SINAD TEMPERATURE PACKAGE- PACKAGE ORDERING TRANSPORT
PRODUCT (LSB) CODES (dB) RANGE LEAD DESIGNATOR NUMBER MEDIA, QTY
ADS8519IBDB Tube, 50
ADS8519IB ±1.5 16-Bit 90 –40°C to +85°C SSOP-28 DB
ADS8519IBDBR Tape and Reel, 2000
ADS8519IDB Tube, 50
ADS8519I ±3 15-Bit 87 –40°C to +85°C SSOP-28 DB
ADS8519IDBR Tape and Reel, 2000
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1) (2)
Over operating free-air temperature range (unless otherwise noted).
UNIT
R1
IN
±25V
R2
IN
±25V
Analog inputs
R3
IN
±25V
REF +V
ANA
+ 0.3V to AGND2 – 0.3V
DGND, AGND2 ±0.3V
Ground voltage differences V
ANA
6V
V
DIG
6V
Digital inputs –0.3V to +V
DIG
+ 0.3V
Internal power dissipation 700mW
Maximum junction temperature +165°C
Lead temperature (soldering, 10s) +300°C
(1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute
maximum conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
ELECTRICAL CHARACTERISTICS
At T
A
= –40°C to +85°C, f
s
= 250kSPS, and V
DIG
= V
ANA
= 5V, using internal reference (unless otherwise specified).
ADS8519I ADS8519IB
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
Resolution 16 16 Bits
ANALOG INPUT
Voltage ranges
(1)
Impedance
(1)
Capacitance 50 50 pF
THROUGHPUT SPEED
Conversion cycle time Acquire and convert 4 4 ms
Throughput rate 250 250 kSPS
(1) ±10V, ±5V, 0V to 8.192V, etc. (see Table 2)
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