Datasheet

ADS8513
SLAS486C – JUNE 2007 – REVISED JANUARY 2009 ...................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= – 40 ° C to +85 ° C, f
S
= 40kSPS, V
S
= 5V, and using internal reference and fixed resistors, unless otherwise specified.
ADS8513I ADS8513IB
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
DIGITAL INPUTS
V
IL
Low-level input voltage – 0.3 +0.8 – 0.3 +0.8 V
V
IH
High-level input voltage 2.0 V
D
+0.3 V 2.0 V
D
+0.3 V V
I
IL
Low-level input current V
IL
= 0V ± 10 µ A
I
IH
High-level input current V
IH
= 5V ± 10 µ A
DIGITAL OUTPUTS
Data format Serial Serial
Data coding Binary twos complement Binary twos complement
V
OL
Low-level output voltage I
SINK
= 1.6mA 0.4 0.4 V
V
OH
High-level output voltage I
SOURCE
= 500 µ A 4 4 V
High-Z state,
Leakage Current ± 1 ± 1 µ A
V
OUT
= 0V to V
S
Output capacitance High-Z state 15 15 pF
DIGITAL TIMING
Bus access time R
L
= 3.3k Ω , C
L
= 50pF 83 83 ns
Bus relinquish time R
L
= 3.3k Ω , C
L
= 10pF 83 83 ns
POWER SUPPLIES
V
S
Supply voltage 4.75 5 5.25 4.75 5 5.25 V
I
DIG
Digital current 0.6 0.6 mA
I
ANA
Analog current 4.2 4.2 mA
V
S
= 5V, f
S
= 40kSPS 24 32.5 24 32.5 mW
Power dissipation
PWRD and REFD high 50 50 µ W
TEMPERATURE RANGE
Specified performance – 40 +85 – 40 +85 ° C
Derated performance – 55 +125 – 55 +125 ° C
Storage temperature – 65 +150 – 65 +150 ° C
θ
JA
Thermal resistance 46 46 ° C/W
Table 1. Input Ranges
CONNECT R1
IN
CONNECT R2
IN
CONNECT R3
IN
INPUT IMPEDANCE
ANALOG INPUT RANGE TO TO TO (k Ω )
± 10V V
IN
BUF GND 45.7
0.3125V to 2.8125V V
IN
V
IN
V
IN
> 10,000
± 5V GND BUF V
IN
26.7
0V to 10V BUF GND V
IN
26.7
0V to 4V BUF V
IN
GND 21.3
± 3.33V V
IN
BUF V
IN
21.3
0.5V to 4.5V GND V
IN
GND 21.3
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