Datasheet
ABSOLUTE MAXIMUM RATINGS
(1) (2)
ELECTRICAL CHARACTERISTICS
ADS8513
SLAS486C – JUNE 2007 – REVISED JANUARY 2009 ......................................................................................................................................................
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
PACKAGE/ORDERING INFORMATION
(1)
MINIMUM NO MINIMUM SPECIFIED
INL MISSING SINAD TEMPERATURE PACKAGE PACKAGE ORDERING TRANSPORT
PRODUCT (LSB) CODES (dB) RANGE LEAD DESIGNATOR NUMBER MEDIA, QTY
ADS8513IBDW Tube, 20
ADS8513IB ± 2 16-Bit 89 – 40 ° C to +85 ° C SO-16 DW
ADS8513IBDWR Tape and Reel, 1000
ADS8513IDW Tube, 20
ADS8513I ± 3 15-Bit 88 – 40 ° C to +85 ° C SO-16 DW
ADS8513IDWR Tape and Reel, 1000
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
over operating free-air temperature range (unless otherwise noted).
PARAMETER UNIT
R1
IN
± 25V
R2
IN
± 25V
Analog inputs
R3
IN
± 25V
REF V
S
+ 0.3V to GND – 0.3V
GND ± 0.3V
Ground voltage differences
V
S
6V
Digital inputs – 0.3V to +V
S
+ 0.3V
Maximum junction temperature +165 ° C
Storage temperature range – 65 ° C to +150 ° C
Internal power dissipation 700mW
Lead temperature (soldering, 1,6 mm from case 10 seconds) +260 ° C
(1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute
maximum conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
At T
A
= – 40 ° C to +85 ° C, f
S
= 40kSPS, V
S
= 5V, and using internal reference and fixed resistors, unless otherwise specified.
ADS8513I ADS8513IB
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
Resolution 16 16 Bits
ANALOG INPUT
Voltage ranges see Table 1 see Table 1 V
Impedance see Table 1 see Table 1 Ω
Capacitance 45 45 pF
THROUGHPUT SPEED
Conversion time Acquire and convert 20 20 µ s
Complete cycle Acquire and convert 25 25 µ s
Throughput rate Acquire and convert 40 40 kSPS
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