Datasheet

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ADS8508
SLAS433 – SEPTEMBER 2005
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= -40 °C to 85 °C, f
s
= 250 kHz, V
DIG
= V
ANA
= 5 V, using internal reference and fixed resistors (See Figure 28 and
Figure 29 ) (unless otherwise specified)
ADS8508IB
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX
I
IL
Low-level input current V
IL
= 0 V ±10 µA
I
IH
High-level input current V
IH
= 5 V ±10 µA
DIGITAL OUTPUTS
Data format (Serial 16-bits)
Data coding (Binary 2's complement
or straight binary)
Pipeline delay (Conversion results
only available after completed con-
version.)
Data clock (Selectable for internal or
external data clock)
Internal clock (output only when EXT/ INT Low 9 MHz
transmitting data)
External clock (can run continually EXT/ INT High 0.1 26
but not recommended for optimum MHz
performance)
V
OL
Low-level output voltage I
SINK
= 1.6 mA 0.4 V
V
OH
High-level output voltage I
SOURCE
= 500 µA 4 V
Leakage current Hi-Z state, ±5 µA
V
OUT
= 0 V to V
DIG
Output capacitance Hi-Z state 15 pF
POWER SUPPLIES
V
DIG
Digital input voltage 4.75 5 5.25 V
V
ANA
Analog input voltage 4.75 5 5.25 V
Must be ≤ V
ANA
I
DIG
Digital input current 4 mA
I
ANA
Analog input current 10 mA
POWER DISSIPATION
PWRD Low f
S
= 250 kHz 70 100 mW
PWRD High 50 µW
TEMPERATURE RANGE
Specified performance -40 85 °C
Derated performance
(9)
-55 125 °C
Storage -65 150 °C
THERMAL RESISTANCE ( Θ
JA
)
SO 75 °C/W
(9) The internal reference may not be started correctly beyond the industrial temperature range (-40°C to 85°C), therefore use of an
external reference is recommended.
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