Datasheet

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DEVICE INFORMATION
V
DIG
V
ANA
BUSY
CS
R/C
BYTE
TAG
SDATA
DATACLK
D0
D1
D2
R1
IN
AGND1
CAP
REF
AGND2
D7
D6
D5
D4
D3
DGND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
ADS8506
R2
IN
SB/BTC
EXT/INT
REFD
PWRD
ADS8506
SLAS484B – SEPTEMBER 2007 – REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= -40 ° C to 85 ° C, f
S
= 40 kHz, V
DIG
= V
ANA
= 5 V, and using internal reference and fixed resistors, (see Figure 43 ) unless
otherwise specified.
ADS8506IB ADS8506I
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX
Data format - Parallel 12-bits in
2-bytes
Data coding - Serial binary 2s
complement or straight binary
V
OL
Low-level output voltage I
SINK
= 1.6 mA 0.4 0.4 V
V
OH
High-level output voltage I
SOURCE
= 500 µ A 4 4 V
High-Z state,
Leakage Current ± 5 ± 5 µ A
V
OUT
= 0 V to V
DIG
Output capacitance High-Z state 15 15 pF
DIGITAL TIMING
Bus access time R
L
= 3.3 k Ω , C
L
= 50 pF 83 83 ns
Bus relinquish time R
L
= 3.3 k Ω , C
L
= 10 pF 83 83 ns
POWER SUPPLIES
V
DIG
Digital I/O voltage Must be ≤ V
ANA
4.75 5 5.25 4.75 5 5.25 V
V
ANA
ADC core voltage 4.75 5 5.25 4.75 5 5.25 V
I
DIG
Digital current 0.6 0.6 mA
I
ANA
Analog current 4.2 4.2 mA
V
ANA
= V
DIG
= 5 V,
24 30 24 30 mW
f
S
= 40 kHz
Power dissipation
REFD High 20 20 mW
PWRD and REFD High 50 50 µ W
TEMPERATURE RANGE
Specified performance -40 85 -40 85 ° C
Derated performance -55 125 -55 125 ° C
Storage temperature -65 150 -65 150 ° C
SO Thermal resistance ( Θ
JA
) 46 46 ° C/W
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