Datasheet
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ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
ADS8506
SLAS484B – SEPTEMBER 2007 – REVISED DECEMBER 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
PACKAGE/ORDERING INFORMATION
(1)
FULL-
MINIMUM NO SPECIFICATION
SCALE PACKAGE PACKAGE ORDERING TRANSPORT
PRODUCT INL MISSING TEMPERATURE
ERROR LEAD DESIGNATOR NUMBER MEDIA, QTY
(LSB) CODE RANGE
(%)
ADS8506IBDW Tube, 20
ADS8506IB ± 0.45 12 ± 0.25 -40 ° C to 85 ° C SO-28 DW
ADS8506IBDWR Tape and Reel, 1000
ADS8506IDW Tube, 20
ADS8506I ± 0.9 12 ± 0.5 -40 ° C to 85 ° C SO-28 DW
ADS8506IDWR Tape and Reel, 1000
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
over operating free-air temperature range (unless otherwise noted)
(1)
UNIT
R1
IN
± 25 V
Analog inputs R2
IN
± 25 V
REF +V
ANA
+ 0.3 V to AGND2 - 0.3 V
DGND, AGND2 ± 0.3 V
V
ANA
6 V
Ground voltage differences
V
DIG
to V
ANA
0.3 V
V
DIG
6 V
Digital inputs -0.3 V to +V
DIG
+ 0.3 V
Maximum junction temperature 165 ° C
Storage temperature range – 65 ° C to 150 ° C
Internal power dissipation 700 mW
Lead temperature (soldering, 1.6 mm from case 10 seconds) 260 ° C
(1) All voltage values are with respect to network ground terminal.
At T
A
= -40 ° C to 85 ° C, f
S
= 40 kHz, V
DIG
= V
ANA
= 5 V, and using internal reference and fixed resistors, (see Figure 43 ) unless
otherwise specified.
ADS8506IB ADS8506I
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX
Resolution 12 12 Bits
ANALOG INPUT
-10 10 -10 10
Voltage ranges See Table 1 0 5 0 5 V
0 4 0 4
Impedance
Capacitance 45 45 pF
THROUGHPUT SPEED
Conversion time 15 15 µ s
Complete cycle Acquire and convert 25 25
Throughput rate 40 kHz
DC ACCURACY
INL Integral linearity error -0.45 ± 0.15 0.45 -0.9 ± 0.15 0.9 LSB
(1)
(1) LSB means Least Significant Bit. One LSB for the ± 10-V input range is 305 µ V.
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