Datasheet

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ADS8382
SLAS416B – JUNE 2004 – REVISED NOVEMBER 2004
SPECIFICATIONS (continued)
At –40°C to 85°C, +VA = +5 V, +VBD = +5 V or +VBD = +2.7 V, using internal or external reference, f
SAMPLE
= 600 kHz,
unless otherwise noted. (All performance parameters are valid only after device has properly resumed from power down,
Table 2 .)
ADS8382IB ADS8382I
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX
VIN = 8 V
p-p
at 1 kHz 96 96
Signal-to-noise
SINAD VIN = 8 V
p-p
at 10 kHz 95 95 dB
+ distortion
(3) (7)
VIN = 8 V
p-p
at 100 kHz 92 92
VIN = 8 V
p-p
at 1 kHz 120 120
Spurious free dynamic
SFDR VIN = 8 V
p-p
at 10 kHz 120 120 dB
range
(3)
VIN = 8 V
p-p
at 100 kHz 99 99
–3dB Small signal
75 75 MHz
bandwidth
REFERENCE INPUT
Reference voltage input
V
ref
2.5 4.096 4.2 2.5 4.096 4.2 V
range
Resistance
(8)
10 10 M Ω
INTERNAL REFERENCE OUTPUT
V
ref
Reference voltage range IOUT = 0 A, T
A
= 30°C 4.088 4.096 4.104 4.088 4.096 4.104 V
Source current Static load 10 10 µ A
Line regulation +VA = 4.75 V to 5.25 V 2.5 2.5 mV
Drift IOUT = 0 A 25 25 ppm/°C
DIGITAL INPUT/OUTPUT
Logic family CMOS
V
IH
High level input voltage +VBD – 1 +VBD + 0.3 +VBD – 1 +VBD + 0.3 V
V
IL
Low level input voltage –0.3 0.8 –0.3 0.8 V
V
OH
High level output voltage I
OH
= 2 TTL loads +VBD –0.6 +VBD –0.6 V
V
OL
Low level output voltage I
OL
= 2 TTL loads 0.4 0.4 V
Data format 2's complement (MSB first)
POWER SUPPLY REQUIREMENTS
+VA 4.75 5 5.25 4.75 5 5.25 V
Power supply
voltage
+VBD 2.7 3.3 5.25 2.7 3.3 5.25 V
Supply current, 600-kHz
I
CC
+VA = 5 V 22 25 22 25 mA
sample rate
(9)
POWER DOWN
Supply current, power
I
CC(PD)
2 2 µ A
down
NAP MODE
Supply current, nap
I
CC(NAP)
3 3 mA
mode
Power-up time from nap 300 300 ns
TEMPERATURE RANGE
Specified performance –40 85 –40 85 °C
(8) Can vary +/-30%.
(9) This includes only +VA current. With +VBD = 5 V, +VBD current is typically 1 mA with a 10-pF load capacitance on the digital output
pins.
4