Datasheet
ADS8365
www.ti.com
.................................................................................................................................................... SBAS362C – AUGUST 2006 – REVISED MARCH 2008
ELECTRICAL CHARACTERISTICS: 100kSPS (continued)
Over recommended operating free-air temperature range at – 40 ° C to +85 ° C, AV
DD
= 5V, BV
DD
= 3V, V
REF
= internal +2.5V, f
CLK
= 2MHz, and
f
SAMPLE
= 100kSPS, unless otherwise noted.
ADS8365
PARAMETER TEST CONDITIONS MIN TYP
(1)
MAX UNIT
DIGITAL OUTPUTS
(4)
Logic family LVCMOS
High-level output voltage V
OH
BV
DD
= 2.7V, I
OH
= – 100 µ A BVDD – 0.2 V
Low-level output voltage V
OL
BV
DD
= 2.7V, I
OL
= 100 µ A 0.2 V
High-impedance state output current I
OZ
CS = BV
DD
, V
I
= BV
DD
or GND ± 50 nA
Output capacitance C
O
5 pF
Load capacitance C
L
30 pF
DATA FORMAT
Bit DB4 = 1 Binary two's complement
Data format
Bit DB4 = 0 Straight binary coding
POWER SUPPLY
Analog supply voltage AV
DD
4.75 5.25 V
Low-voltage levels 2.7 3.6 V
Buffer I/O supply voltage BV
DD
5V logic levels 4.5 5.5 V
Analog operating supply current AI
DD
38 45 mA
BV
DD
= 3V 60 90 µ A
Buffer I/O operating supply current BI
DD
BV
DD
= 5V 100 150 µ A
BV
DD
= 3V 190 225 mW
BV
DD
= 5V 190 225 mW
Power dissipation
Nap mode enabled 5 mW
Powerdown enabled 50 µ W
(4) Applies for 3.0V nominal supply: BV
DD
(min) = 2.7V and BV
DD
(max) = 3.6V.
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