Datasheet

ADS8331
ADS8332
SBAS363C –DECEMBER 2009–REVISED MAY 2012 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum at the end of this
document, or visit the device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature range, unless otherwise noted.
(1)
ADS8331, ADS8332 UNIT
IN
X
, MUXOUT, ADCIN, REF+ to AGND –0.3 to VA + 0.3 V
Voltage
COM, REF– to AGND –0.3 to 0.3 V
VA to AGND –0.3 to 7 V
Voltage range VBD to DGND –0.3 to 7 V
AGND to DGND –0.3 to 0.3 V
Digital input voltage to DGND –0.3 to VBD + 0.3 V
Digital output voltage to DGND –0.3 to VBD + 0.3 V
Operating free-air temperature range, (T
A
) –40 to +85 °C
Storage temperature range, (T
STG
) –65 to +150 °C
Junction temperature (T
J
Max) +150 °C
Power dissipation (T
J
Max – T
A
)/θ
JA
W
4x4 QFN-24
Package
θ
JA
thermal impedance 47 °C/W
Power dissipation (T
J
Max – T
A
)/θ
JA
W
TSSOP-24
Package
θ
JA
thermal impedance 47 °C/W
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability.
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