Datasheet

ADS8326
SBAS343C –MAY 2007–REVISED SEPTEMBER 2009.................................................................................................................................................. www.ti.com
ELECTRICAL CHARACTERISTICS: V
DD
= +5V (continued)
At –40°C to +85°C, V
REF
= +5V, –IN = GND, f
SAMPLE
= 250kHz, and f
DCLOCK
= 24 × f
SAMPLE
, unless otherwise noted.
ADS8326I ADS8326IB
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
AC ACCURACY
5V
PP
sinewave at 2kHz –98 –99 dB
Total harmonic distortion THD
5V
PP
sinewave at 10kHz –90 –91 dB
5V
PP
sinewave at 2kHz 102 103 dB
Spurious-free dynamic
SFDR
range
5V
PP
sinewave at 10kHz 94 95 dB
5V
PP
sinewave at 2kHz 91 91.5 dB
Signal-to-noise ratio SNR
5V
PP
sinewave at 10kHz 91 91.5 dB
5V
PP
sinewave at 2kHz 90 91 dB
Signal-to-noise + distortion SINAD
5V
PP
sinewave at 10kHz 87.5 88 dB
5V
PP
sinewave at 2kHz 14.69 14.86 Bits
Effective number of bits ENOB
5V
PP
sinewave at 10kHz 14.28 14.35 Bits
VOLTAGE REFERENCE INPUT
Reference voltage 0.1 V
DD
0.1 V
DD
V
CS = GND, f
SAMPLE
= 0Hz 5 5 GΩ
Reference input resistance
CS = V
DD
5 5 GΩ
Reference input capacitance 24 24 pF
f
S
= 250kHz 170 220 170 220 μA
f
S
= 200kHz 140 180 140 180 μA
Reference input current f
S
= 100kHz 70 90 70 90 μA
f
S
= 10kHz 11 14 11 14 μA
CS = V
DD
0.1 0.1 μA
DIGITAL INPUTS
(1)
Logic family CMOS CMOS
High-level input voltage V
IH
0.7 × V
DD
V
DD
+ 0.3 0.7 × V
DD
V
DD
+ 0.3 V
Low-level input voltage V
IL
–0.3 0.3 × V
DD
–0.3 0.3 × V
DD
V
Input current I
IN
V
I
= V
DD
or GND –50 +50 –50 +50 nA
Input capacitance C
I
5 5 pF
DIGITAL OUTPUTS
(1)
Logic family CMOS CMOS
High-level output voltage V
OH
V
DD
= 4.5V, I
OH
= –100μA 4.44 4.44 V
Low-level output voltage V
OL
V
DD
= 4.5V, I
OL
= 100μA 0.5 0.5 V
High-impedance state
I
OZ
CS = V
DD
, V
I
= V
DD
or GND –50 +50 –50 +50 nA
output current
Output capacitance C
O
5 5 pF
Load capacitance C
L
30 30 pF
Straight Straight
Data format
binary binary
(1) Applies for 5.0V nominal supply: V
DD
(min) = 4.5V and V
DD
(max) = 5.5V.
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