Datasheet

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ELECTRICAL CHARACTERISTICS
ADS8325
SBAS226C – MARCH 2002 – REVISED AUGUST 2007
ELECTRICAL CHARACTERISTICS: V
DD
= +2.7V (continued)
Over recommended operating free-air temperature at – 40 ° C to +85 ° C, V
REF
= +2.5V, – IN = GND, f
SAMPLE
= 100kHz, and f
CLK
= 24 × f
SAMPLE
, unless otherwise noted.
ADS8325I ADS8325IB
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
DIGITAL OUTPUTS
(2)
Logic family LVCMOS LVCMOS
High-level output voltage V
OH
V
DD
= 2.7V, I
OH
= – 100 μ A V
DD
– 0.2 V
DD
– 0.2 V
Low-level output voltage V
OL
V
DD
= 2.7V, I
OL
= 100 μ A 0.2 0.2 V
High-impedance-state output
I
OZ
CS = V
DD
, V
I
= V
DD
or GND ± 50 ± 50 ± 50 nA
current
Output capacitance C
O
5 5 pF
Load capacitance C
L
30 30 pF
Data format Straight Binary Straight Binary
(2) Applies for 3.0V nominal supply: V
DD
(min) = 2.7V and V
DD
(max) = 3.6V.
Over recommended operating free-air temperature at – 40 ° C to +85 ° C, V
REF
= V
DD
, – IN = GND, f
SAMPLE
= 100kHz, and f
CLK
=
24 × f
SAMPLE
, unless otherwise noted.
ADS8325I ADS8325IB
UNIT
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX
POWER-SUPPLY REQUIREMENTS
Low-voltage levels 2.7 3.6 2.7 3.6 V
Power supply V
DD
5V logic levels 4.5 5.5 4.5 5.5 V
V
DD
= 3V 0.75 1.5 0.75 1.5 mA
Operating supply current I
DD
V
DD
= 5V 0.9 1.5 0.9 1.5 mA
V
DD
= 3V 0.1 0.1 μ A
Power-down supply current (I
DD
V
DD
= 5V 0.2 0.2 μ A
V
DD
= 3V 2.25 4.5 2.25 4.5 mW
Power dissipation
V
DD
= 5V 4.5 7.5 4.5 7.5 mW
V
DD
= 3V, CS = V
DD
0.3 0.3 μ W
Power dissipation in power-down
V
DD
= 5V, CS = V
DD
0.6 0.6 μ W
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Product Folder Link(s): ADS8325