Datasheet

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ADS8325
SBAS226C – MARCH 2002 – REVISED AUGUST 2007
ELECTRICAL CHARACTERISTICS: V
DD
= +5 V (continued)
Over recommended operating free-air temperature at – 40 ° C to +85 ° C, V
REF
= 5V, – IN = GND, f
SAMPLE
= 100kHz, and f
CLK
=
24 × f
SAMPLE
, unless otherwise noted.
ADS8325I ADS8325IB
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
Total harmonic distortion THD 5V
PP
sinewave, at 1kHz – 100 – 106 dB
Spurious-free dynamic
SFDR 5V
PP
sinewave, at 1kHz – 100 – 108 dB
range
Signal-to-noise ratio SNR – 90 – 91 dB
Signal-to-noise + distortion SINAD 5V
PP
sinewave, at 1kHz – 90 – 91 dB
Effective number of bits ENOB 14.6 14.7 Bits
VOLTAGE REFERENCE INPUT
Reference voltage 2.5 V
DD
+ 0.3 2.5 V
DD
+ 0.3 V
CS = GND, f
SAMPLE
= 0Hz 5 5 k Ω
Reference input resistance
CS = V
DD
5 5 G Ω
Reference input
20 20 pF
capacitance
1 1.5 1 1.5 mA
Reference input current
CS = V
DD
0.1 0.1 μ A
DIGITAL INPUTS
(1)
Logic family CMOS CMOS
High-level input voltage V
IH
0.7 × V
DD
V
DD
+ 0.3 0.7 × V
DD
V
DD
+ 0.3 V
Low-level input voltage V
IL
– 0.3 0.3 × V
DD
– 0.3 0.3 × V
DD
V
Input current I
IN
V
I
= V
DD
or GND ± 50 ± 50 nA
Input capacitance C
I
5 5 pF
DIGITAL OUTPUTS
(1)
Logic family CMOS CMOS
High-level output voltage V
OH
V
DD
= 4.5V, I
OH
= – 100 μ A 4.44 4.44 V
Low-level output voltage V
OL
V
DD
= 4.5V, I
OL
= 100 μ A 0.5 0.5 V
High-impedance-state
I
OZ
CS = V
DD
, V
I
= V
DD
or GND ± 50 ± 50 nA
output current
Output capacitance C
O
5 5 pF
Load capacitance C
L
30 30 pF
Data format Straight Binary Straight Binary
(1) Applies for 5.0V nominal supply: V
DD
(min) = 4.5V and V
DD
(max) = 5.5V.
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