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R
ON
50W
C
(SAMPLE)
40pF
Shut-Down
Switch
V
DD
I/O
GND
V
DD
ANALOGIN
GND
DiodeTurn-OnVoltage:0.35V
EquivalentAnalogInputCircuit
V
DD
REF
GND
EquivalentReference
InputCircuit
EquivalentDigitalInput/OutputCircuit
20pF
5kW
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS: V
DD
= +5 V
ADS8325
SBAS226C – MARCH 2002 – REVISED AUGUST 2007
EQUIVALENT INPUT CIRCUIT
Over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
Low-voltage levels 2.7 3.6 V
Supply voltage, GND to V
DD
5V logic levels 4.5 5.0 5.5 V
Reference input voltage 2.5 V
DD
V
– IN – 0.3 0 0.5 V
Analog input voltage
+IN – ( – IN) 0 V
REF
V
T
J
Operating junction temperature range – 40 +125 ° C
Over recommended operating free-air temperature at – 40 ° C to +85 ° C, V
REF
= 5V, – IN = GND, f
SAMPLE
= 100kHz, and f
CLK
=
24 × f
SAMPLE
, unless otherwise noted.
ADS8325I ADS8325IB
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
ANALOG INPUT
Full-scale range FSR +IN – ( – IN) 0 V
REF
0 V
REF
V
Operating common-mode signal – 0.3 0.5 – 0.3 0.5 V
Input resistance – IN = GND 5 5 G Ω
Input capacitance – IN = GND, during sampling 45 45 pF
Input leakage current – IN = GND ± 50 ± 50 nA
Differential input capacitance +IN to – IN, during sampling 20 20 pF
Full-power bandwidth FSBW FS sinewave, SINAD = – 3dB 20 20 kHz
DC ACCURACY
Resolution 16 16 Bits
No missing code NMC 15 16 Bits
Integral linearity error INL ± 3 ± 6 ± 1.5 ± 4 LSB
Offset error V
OS
± 0.75 ± 1.5 ± 0.5 ± 1 mV
Offset error drift TCV
OS
± 0.2 ± 0.2 ppm/ ° C
Gain error G
ERR
± 24 ± 12 LSB
Gain error drift TCG
ERR
± 3 ± 3 ppm/ ° C
Noise 20 20 μ VRMS
Power-supply rejection 4.75V ≤ V
DD
≤ 5.25V 3 3 LSB
SAMPLING DYNAMICS
Conversion time t
CONV
24kHz < f
CLK
≤ 2.4MHz 6.667 666.7 6.667 666.7 μ s
Acquisition time t
AQ
f
CLK
= 2.4MHz 1.875 1.875 μ s
Throughput rate 100 100 kSPS
Clock frequency 0.024 2.4 0.024 2.4 MHz
AC ACCURACY
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Product Folder Link(s): ADS8325