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ELECTRICAL CHARACTERISTICS: V
DD
= +2.7V
ADS8325
SBAS226C – MARCH 2002 – REVISED AUGUST 2007
Over recommended operating free-air temperature at – 40 ° C to +85 ° C, V
REF
= +2.5V, – IN = GND, f
SAMPLE
= 100kHz, and f
CLK
= 24 × f
SAMPLE
, unless otherwise noted.
ADS8325I ADS8325IB
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
ANALOG INPUT
Full-scale range FSR +IN – ( – IN) 0 V
REF
0 V
REF
V
Operating common-mode signal – 0.3 0.5 – 0.3 0.5 V
Input resistance – IN = GND 5 5 G Ω
Input capacitance – IN = GND, during sampling 45 45 pF
Input leakage current – IN = GND ± 50 ± 50 nA
Differential input capacitance +IN to – IN, during sampling 20 20 pF
Full-power bandwidth FSBW FS sinewave, SINAD = – 3 dB 4 4 kHz
DC ACCURACY
Resolution 16 16 Bits
No missing code NMC 14 15 Bits
Integral linearity error INL ± 3 ± 6 ± 1.5 ± 4 LSB
Offset error V
OS
± 0.75 ± 1.5 ± 0.5 ± 1 mV
Offset error drift TCV
OS
± 3 ± 3 ppm/ ° C
Gain error G
ERR
± 33 ± 16 LSB
Gain error drift TCG
ERR
± 0.3 ± 0.3 ppm/ ° C
Noise 20 20 μ VRMS
Power-supply rejection 2.7V ≤ V
DD
≤ 3.6V 7 7 LSB
SAMPLING DYNAMICS
Conversion time t
CONV
24kHz < f
CLK
≤ 2.4MHz 6.667 666.7 6.667 666.7 μ s
Acquisition time t
AQ
f
CLK
= 2.4MHz 1.875 1.875 μ s
Throughput rate 100 100 kSPS
Clock frequency 0.024 2.4 0.024 2.4 MHz
AC ACCURACY
Total harmonic distortion THD 2.5V
PP
sinewave, at 1kHz – 94 – 94 dB
Spurious-free dynamic range SFDR 2.5V
PP
sinewave, at 1kHz – 96 – 96 dB
Signal-to-noise ratio SNR – 85 – 86 dB
Signal-to-noise + distortion SINAD 2.5V
PP
sinewave, at 1kHz – 85 – 85.5 dB
Effective number of bits ENOB 13.8 13.9 Bits
VOLTAGE REFERENCE INPUT
Reference voltage 2.5 V
DD
+ 0.3 2.5 V
DD
+ 0.3 V
CS = GND, f
SAMPLE
= 0Hz 5 5 k Ω
Reference input resistance
CS = V
DD
5 5 G Ω
Reference input capacitance 20 20 pF
0.5 0.75 0.5 0.75 mA
Reference input current
CS = V
DD
0.1 0.1 μ A
DIGITAL INPUTS
(1)
Logic family LVCMOS LVCMOS
High-level input voltage V
IH
V
DD
= 3.6V 2 V
DD
+ 0.3 2 V
DD
+ 0.3 V
Low-level input voltage V
IL
V
DD
= 2.7V – 0.3 0.8 – 0.3 0.8 V
Input current I
IN
V
I
= V
DD
or GND ± 50 ± 50 nA
Input capacitance C
I
5 5 pF
(1) Applies for 3.0V nominal supply: V
DD
(min) = 2.7V and V
DD
(max) = 3.6V.
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