Datasheet

DV
DD
D
IN
DGND
R
ON
20W
C
(SAMPLE)
20pF
AV
DD
A
IN
AGND
DiodeTurn-OnVoltage:0.35V
EquivalentAnalogInputCircuit EquivalentDigitalInputCircuit
ADS8323
SBAS224C –DECEMBER 2001–REVISED JANUARY 2010 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
At –40°C to +85°C, +DV
DD
= +AV
DD
= +5V, V
REF
= +2.5V, f
SAMPLE
= 500kSPS, and f
CLK
= 20 • f
SAMPLE
, unless otherwise
specified.
ADS8323Y ADS8323YB
(1)
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
DIGITAL INPUT/OUTPUT
Logic family CMOS CMOS
Logic levels:
V
IH
I
IH
≤ +5μA 3.0 +DV
DD
3.0 +DV
DD
V
V
IL
I
IL
≤ –5μA –0.3 0.8 –0.3 0.8 V
V
OH
I
OH
= –1.6mA 4.0 4.0 V
V
OL
I
OH
= +1.6mA 0.4 0.4 V
Data format Binary twos complement Binary twos complement
POWER-SUPPLY REQUIREMENTS
Power-supply voltage
+AV
DD
4.75 5 5.25 4.75 5 5.25 V
+DV
DD
4.75 5 5.25 4.75 5 5.25 V
Supply current f
SAMPLE
= 500kSPS 17 25 17 25 mA
Power dissipation f
SAMPLE
= 500kSPS 85 125 85 125 mW
TEMPERATURE RANGE
Specified performance –40 +85 –40 +85 °C
EQUIVALENT INPUT CIRCUITS
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