Datasheet
Table Of Contents
- FEATURES
- APPLICATIONS
- DESCRIPTION
- ABSOLUTE MAXIMUM RATINGS
- DISSIPATION RATINGS
- RECOMMENDED OPERATING CONDITIONS
- ELECTRICAL CHARACTERISTICS: VDD = +5V
- ELECTRICAL CHARACTERISTICS: VDD = +2.7V
- ELECTRICAL CHARACTERISTICS: GENERAL
- PIN CONFIGURATION
- TIMING INFORMATION
- TYPICAL CHARACTERISTICS: VDD = +5V
- TYPICAL CHARACTERISTICS: VDD = +2.7V
- THEORY OF OPERATION
- APPLICATION CIRCUITS
- Revision History

ADS8317
SBAS356D –JUNE 2007–REVISED OCTOBER 2009 ....................................................................................................................................................
www.ti.com
ELECTRICAL CHARACTERISTICS: V
DD
= +5V (continued)
At –40°C to +85°C, V
REF
= +2.5V, –IN = +2.5V, f
SAMPLE
= 250kHz, and f
CLK
= 24 × f
SAMPLE
, unless otherwise noted.
ADS8317I ADS8317IB
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
AC ACCURACY
5V
PP
sinewave at 2kHz –102 –106 dB
Total harmonic distortion THD
5V
PP
sinewave at 10kHz –100 –104 dB
5V
PP
sinewave at 2kHz 106 110 dB
Spurious-free dynamic range SFDR
5V
PP
sinewave at 10kHz 104 109 dB
5V
PP
sinewave at 2kHz 89.6 90 dB
Signal-to-noise ratio SNR
5V
PP
sinewave at 10kHz 89.6 90 dB
5V
PP
sinewave at 2kHz 89.5 89.9 dB
Signal-to-noise + distortion SINAD
5V
PP
sinewave at 10kHz 89.4 89.8 dB
5V
PP
sinewave at 2kHz 14.57 14.65 Bits
Effective number of bits ENOB
5V
PP
sinewave at 10kHz 14.56 14.63 Bits
VOLTAGE REFERENCE INPUT
Reference voltage 0.5 V
DD
/2 0.5 V
DD
/2 V
CS = GND, f
SAMPLE
= 0Hz 5 5 GΩ
Reference input resistance
CS = V
DD
5 5 GΩ
Reference input capacitance 24 24 pF
f
S
= 250kHz 35 52 35 52 μA
f
S
= 200kHz 25 38 25 38 μA
Reference input current f
S
= 100kHz 10 15 10 15 μA
f
S
= 10kHz 1 2 1 2 μA
CS = V
DD
0.1 0.1 μA
DIGITAL INPUTS
(1)
Logic family CMOS CMOS
High-level input voltage V
IH
0.7 × V
DD
V
DD
+ 0.3 0.7 × V
DD
V
DD
+ 0.3 V
Low-level input voltage V
IL
–0.3 0.3 × V
DD
–0.3 0.3 × V
DD
V
Input current I
IN
V
I
= V
DD
or GND –50 +50 –50 +50 nA
Input capacitance C
I
5 5 pF
DIGITAL OUTPUTS
(1)
Logic family CMOS CMOS
High-level output voltage V
OH
V
DD
= 4.5V, I
OH
= –100μA 4.44 4.44 V
Low-level output voltage V
OL
V
DD
= 4.5V, I
OL
= 100μA 0.5 0.5 V
High-impedance state output
I
OZ
CS = V
DD
, V
I
= V
DD
or GND –50 +50 –50 +50 nA
current
Output capacitance C
O
5 5 pF
Load capacitance C
L
30 30 pF
Data format Binary twos complement Binary twos complement
(1) Applies for 5.0V nominal supply: V
DD
(min) = 4.5V and V
DD
(max) = 5.5V.
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