Datasheet

ADS8317
www.ti.com .................................................................................................................................................... SBAS356D –JUNE 2007–REVISED OCTOBER 2009
RECOMMENDED OPERATING CONDITIONS
MIN TYP MAX UNIT
Low-voltage levels 2.7 3.6 V
Supply voltage, GND to V
DD
5V logic levels 4.5 5.0 5.5 V
Reference input voltage 1 V
DD
/2 V
–IN to GND –0.2 V
DD
+ 0.2 V
Analog input voltage +IN to GND –0.2 V
DD
+ 0.2 V
+IN – (–IN) –V
REF
+V
REF
V
Operating junction temperature, T
J
–40 +125 °C
ELECTRICAL CHARACTERISTICS: V
DD
= +5V
At –40°C to +85°C, V
REF
= +2.5V, –IN = +2.5V, f
SAMPLE
= 250kHz, and f
CLK
= 24 × f
SAMPLE
, unless otherwise noted.
ADS8317I ADS8317IB
PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
ANALOG INPUT
Full-scale range FSR +IN – (–IN) –V
REF
V
REF
–V
REF
V
REF
V
Absolute input range +IN –0.1 V
DD
+ 0.1 –0.1 V
DD
+ 0.1 V
Hold 5 5 GΩ
Input resistance R
ON
Sampling 50 100 50 100 Ω
Input capacitance During sampling 24 24 pF
Input leakage current ±50 ±50 nA
Differential input capacitance +IN to –IN, during sampling 20 20 pF
Full-power bandwidth FSBW f
S
sinewave, SINAD = 60dB 500 500 kHz
DC ACCURACY
Resolution 16 16 Bits
No missing codes NMC 16 16 16 16 Bits
Integral linearity error INL –2 ±1.5 +2 –1.5 ±0.8 +1.5 LSB
Differential linearity error DNL –1 ±1 +2 –1 +0.7,–0.5 +1.25 LSB
Offset error V
OS
–2 ±0.75 +2 –1 ±0.5 +1 mV
Offset error drift TCV
OS
±3 ±3 μV/°C
Positive –32 ±16 +32 –32 ±16 +32 LSB
Gain error G
ERR
Negative –32 ±16 +32 –32 ±16 +32 LSB
Gain error drift TCG
ERR
±0.1 ±0.1 ppm/°C
Bipolar zero error –2 ±0.75 +2 –1 ±0.5 +1 mV
Bipolar zero error drift ±3 ±3 μV/°C
Noise 50 50 μVRMS
Power-supply rejection PSRR 4.75V ≤ V
DD
≤ 5.25V 1 1 LSB
SAMPLING DYNAMICS
Conversion time
t
CONV
24kHz ≤ f
CLK
≤ 6.0MHz 2.667 666.7 2.667 666.7 μs
(16 DCLOCKs)
Acquisition time
t
AQ
f
CLK
= 6.0MHz 0.75 0.75 μs
(4.5 DCLOCKs)
Throughput rate
250 250 kSPS
(22 DCLOCKs)
Clock frequency 0.024 6.0 0.024 6.0 MHz
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Product Folder Link(s): ADS8317