Datasheet

ADS830
3
SBAS086A
ELECTRICAL CHARACTERISTICS (Cont.)
At T
A
= full specified temperature range, single-ended input range = 1.5V to 3.5V, sampling rate = 60MHz, and external reference, unless otherwise noted.
ADS830E
PARAMETER CONDITIONS MIN TYP MAX UNITS
CMOS/TTL Compatible
Rising Edge of Convert Clock
CMOS/TTL Compatible
Straight Offset Binary
DIGITAL INPUTS
Logic Family
Convert Command Start Conversion
High Level Input Current
(5)
(V
IN
= 5V) 100 µA
Low Level Input Current (V
IN
= 0V) 10 µA
High Level Input Voltage +2.4 V
Low Level Input Voltage +1.0 V
Input Capacitance 5pF
DIGITAL OUTPUTS
Logic Family
Logic Coding
Low Output Voltage (I
OL
= 50µA) VDRV = 5V +0.1 V
Low Output Voltage, (I
OL
= 1.6mA) +0.2 V
High Output Voltage, (I
OH
= 50µA) +4.9 V
High Output Voltage, (I
OH
= 0.5mA) +4.8 V
Low Output Voltage, (I
OL
= 50µA) VDRV = 3V +0.1 V
High Output Voltage, (I
OH
= 50µA) +2.8 V
Output Capacitance 5pF
ACCURACY
(External Reference, 2Vp-p, Unless Otherwise Noted)
f
S
= 2.5MHz
Zero Error (Referred to FS) at 25°C 2.5 ±0.25 +2.5 %FS
Zero Error Drift (Referred to FS) ±53 ppm/°C
Gain Error
(6)
at 25°C 2.5 ±0.3 +2.5 %FS
Gain Error Drift
(6)
±75 ppm/°C
Power Supply Rejection of Gain V
S
= ±5% 58 dB
Internal REFT Tolerance Deviation from Ideal 3.0V ±10 ±100 mV
Internal REFB Tolerance Deviation from Ideal 2.0V ±10 ±100 mV
External REFT Voltage Range REFB + 0.8 3.0 V
S
1.25 V
External REFB Voltage Range 1.25 2.0 REFT 0.8 V
Reference Input Resistance REFT to REFB 800 k
POWER SUPPLY REQUIREMENTS
Supply Voltage: +V
S
Operating +4.75 +5.0 +5.25 V
Supply Current: +I
S
Operating 37 45 mA
Power Dissipation: VDRV = 5V External Reference 185 225 mW
VDRV = 3V External Reference 170 mW
VDRV = 5V Internal Reference 215 mW
VDRV = 3V Internal Reference 200 mW
Thermal Resistance,
θ
JA
SSOP-20 115 °C/W
NOTES: (1) Spurious Free Dynamic Range refers to the magnitude of the largest harmonic. (2) dBFS means dB relative to Full Scale. (3) Two-tone
intermodulation distortion is referred to the largest fundamental tone. This number will be 6dB higher if it is referred to the magnitude of the two-tone fundamental
envelope. (4) Effective number of bits (ENOB) is defined by (SINAD 1.76) /6.02. (5) A 50k pull-down resistor is inserted internally. (6) Excludes internal
reference.