Datasheet

ADS7805
2
SBAS020D
www.ti.com
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
Analog Inputs: V
IN
............................................................................. ±25V
REF.................................................. +V
ANA
+ 0.3V to AGND2 0.3V
CAP .................. Indifinite Short to AGND2 Momentary Short to V
ANA
Ground Voltage Differences: DGND, AGND1, AGND2 ................... ±0.3V
V
ANA
....................................................................................................... 7V
V
DIG
to
V
ANA
...................................................................................... +0.3V
V
DIG
........................................................................................................ 7V
Digital Inputs .......................................................... 0.3V to +V
DIG
+ 0.3V
Maximum Junction Temperature ................................................... +165°C
Internal Power Dissipation............................................................. 825mW
Lead Temperature (soldering, 10s) ............................................... +300°C
NOTE: (1) Stresses above those listed under
Absolute Maximum Ratings
may
cause permanent damage to the device. Exposure to absolute maximum
conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
(1)
MINIMUM
MAXIMUM SIGNAL-TO-
LINEARITY (NOISE +
SPECIFIED
ERROR DISTORTION) PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
PRODUCT (LSB) RATIO (dB) PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY
ADS7805P ±4 83 DIP-28 NT 25°C to +85°C NT ADS7805P Tube, 13
ADS7805PB ±3 86 DIP-28 NT 25°C to +85°C NT ADS7805PB Tube, 13
ADS7805U ±4 83 SO-28 DW 25°C to +85°C DW ADS7805U Tube, 28
ADS7805U ±4 83 SO-28 DW 25°C to +85°C DW ADS7805U/1K Tape and Reel, 1000
ADS7805UB ±3 86 SO-28 DW 25°C to +85°C DW ADS7805UB Tube, 28
ADS7805UB ±3 86 SO-28 DW 25°C to +85°C DW ADS7805UB/1K Tape and Reel, 1000
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.
PACKAGE/ORDERING INFORMATION
(1)
ADS7805P, U ADS7805PB, UB
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
RESOLUTION 16 16 Bits
ANALOG INPUT
Voltage Ranges ±10 ±10 V
Impedance 23 23 k
Capacitance 35 35 pF
THROUGHPUT SPEED
Conversion Cycle Acquire and Convert 10 10 µs
Throughput Rate 100 100 kHz
DC ACCURACY
Integral Linearity Error ±4 ±3 LSB
(1)
No Missing Codes 15 16 Bits
Transition Noise
(2)
1.3 1.3 LSB
Full-Scale Error
(3,4)
±0.5 ±0.25 %
Full-Scale Error Drift ±7 ±5 ppm/°C
Full-Scale Error
(3,4)
Ext. 2.5000V Ref ±0.5 ±0.25 %
Full-Scale Error Drift Ext. 2.5000V Ref ±2 ±2 ppm/°C
Bipolar Zero Error
(3)
±10 ±10 mV
Bipolar Zero Error Drift ±2 ±2 ppm/°C
Power Supply Sensitivity +4.75V < V
D
< +5.25V ±8 ±8LSB
(V
DIG
= V
ANA
= V
D
)
AC ACCURACY
Spurious-Free Dynamic Range f
IN
= 20kHz 90 94 dB
(5)
Total Harmonic Distortion f
IN
= 20kHz 90 94 dB
Signal-to-(Noise+Distortion) f
IN
= 20kHz 83 86 dB
60dB Input 30 32 dB
Signal-to-Noise f
IN
= 20kHz 83 86 dB
Full-Power Bandwidth
(6)
250 250 kHz
SAMPLING DYNAMICS
Aperture Delay 40 40 ns
Transient Response FS Step 2 2 µs
Overvoltage Recovery
(7)
150 150 ns
ELECTRICAL CHARACTERISTICS
T
A
= 25°C to +85°C, f
S
= 100kHz, V
DIG
= V
ANA
= +5V, using internal reference, unless otherwise specified.