Datasheet

ADS1672
SBAS402D –JUNE 2008–REVISED JULY 2010 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
All specifications are at T
A
= –40°C to +85°C, AVDD = 5V, DVDD = 3V, f
CLK
= 20MHz, V
REF
= +3V, and R
BIAS
= 7.5kΩ,
unless otherwise noted.
ADS1672
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CLOCK (CLK)
V
IH
0.7AVDD AVDD V
V
IL
AGND 0.3AVDD V
DIGITAL INPUTS
V
IH
0.7DVDD DVDD V
V
IL
DGND 0.3DVDD V
Input leakage DGND < V
IN
< DVDD ±10 mA
CMOS OUTPUTS
V
OH
I
OH
= 2mA 0.8DVDD V
V
OL
I
OL
= 2mA 0.2DVDD V
LVDS OUTPUTS
Steady-state differential output voltage
|V
OD(SS)
| 340 mV
magnitude
Change in steady-state differential
Δ|V
OD(SS)
| output voltage magnitude between ±50 mV
logic states
Steady-state common-mode voltage
V
OC(SS)
1.2 V
output
Change in steady-state common-mode
Δ|V
OC(SS)
| ±50 mV
output voltage between logic states
Peak-to-peak change in common-mode
V
OC(pp)
50 150 mV
output voltage
V
OY
or V
OZ
= 0V 3 mA
Short-circuit output current (I
OS
)
V
OD
= 0V 3 mA
High-impedance output current (I
OZ
) V
O
= 0V or +DVDD ±5 mA
Load 5 pF
POWER-SUPPLY REQUIREMENTS
AVDD 4.75 5.0 5.25 V
DVDD 2.7 3.0 3.3 V
AVDD current 51 55 mA
CMOS outputs, DVDD = 3V 28 32 mA
DVDD current
LVDS outputs, DVDD = 3V 33 37 mA
CMOS outputs,
350 370 mW
AVDD = 5V, DVDD = 3V
Power dissipation
Power down 5 mW
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