Datasheet
Number of Occurrences
Offset (
µ
V)
3000
2500
2000
1500
1000
500
0
−
50
−
45
−
40
−
35
−
30
−
25
−
20
−
15
−
10
5
0
5
10
15
20
25
30
35
40
45
50
DRATE[1:0] = 11
16384 Points
Number of Occurrences
Offset (
µ
V)
4500
4000
3500
3000
2500
2000
1500
1000
500
0
−
35
−
30
−
25
−
20
−
15
−
10
−
5
0
5
10
15
20
25
30
35
DRATE[1:0] = 10
16384 Points
Number of Occurrences
Offset (
µ
V)
3500
3000
2500
2000
1500
1000
500
0
−
20
−
16
−
12
−
8
−
4
0
4
8
12
16
20
DRATE[1:0] = 01
16384 Points
Number of Occurrences
Offset (
µ
V)
2500
2000
1500
1000
500
0
−
12
−
10
−
8
−
6
−
4
−
2
0
2
4
6
8
10
12
DRATE[1:0] = 00
16384 Points
RMS Noise (
µ
V)
Input Voltage (%FS)
20
15
10
5
0
−
100
−
75 10075
−
50
−
25 50250
DRATE[1:0] = 11
DRATE[1:0] = 10
DRATE[1:0] = 01
DRATE[1:0] = 00
Number of Occurrences
RMS Noise (
µ
V)
20
15
10
5
0
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
50 units from two production lots.
DRATE[1:0] = 11
ADS1258-EP
www.ti.com
SBAS445D –MARCH 2009– REVISED MARCH 2011
TYPICAL CHARACTERISTICS
At T
A
= +25°C, AVDD = +2.5V, AVSS = –2.5V, DVDD = +3.3V, f
CLK
= 16MHz (external clock) or f
CLK
= 15.729MHz (internal clock), OPA227
buffer between MUX outputs and ADC inputs, VREFP = +2.048V, and VREFN = –2.048V, unless otherwise noted.
READING HISTOGRAM READING HISTOGRAM
Figure 4. Figure 5.
READING HISTOGRAM READING HISTOGRAM
Figure 6. Figure 7.
NOISE HISTOGRAM NOISE vs INPUT VOLTAGE
Figure 8. Figure 9.
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