Datasheet

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DIGITAL CHARACTERISTICS: T
MIN
to T
MAX
, DV
DD
= 2.7V to 5.25V
FLASH CHARACTERISTICS: T
MIN
to T
MAX
, DV
DD
= 2.7V to 5.25V, unless otherwise specified.
ADS1218
SBAS187C – SEPTEMBER 2001 – REVISED SEPTEMBER 2005
PARAMETER CONDITIONS MIN TYP MAX UNIT
Digital Input/Output
Logic Family CMOS
Logic Level
V
IH
0.8 × DV
DD
DV
DD
V
V
IL
DGND 0.2 × DV
DD
V
V
OH
I
OH
= 1mA DV
DD
– 0.4 V
V
OL
I
OL
= 1mA DGND DGND + 0.4 V
Input Leakage
I
IH
V
I
= DV
DD
10 µA
I
IL
V
I
= 0 –10 µA
Master Clock Rate: f
OSC
(1)
1 5 MHz
Master Clock Period: t
OSC
(1)
1/f
OSC
200 1000 ns
(1) For the Write RAM to Flash operation (WR2F), the SPEED bit in the SETUP register must be set appropriately and the device operating
frequency must be: 2.3MHz < f
OSC
< 4.13MHz.
PARAMETER CONDITIONS MIN TYP MAX UNIT
Operating Current
Page Write DV
DD
= 5V, During WR2F Command 17 mA
DV
DD
= 3V, During WR2F Command 9 mA
Page Read DV
DD
= 5V, During RF2R Command 8 mA
DV
DD
= 3V, During RF2R Command 2 mA
Endurance 100,000 Write Cycles
Data Retention at +25°C 100 Years
DV
DD
for Erase/Write 2.7 5.25 V
7