Datasheet

R
650W
ON
C
1pF
(SAMPLE)
BV
DD
D
IN
BGND
AV
DD
A
IN
AGND
DiodeTurn-OnVoltage:0.35V
EquivalentDigitalInputCircuit
EquivalentAnalogInputCircuit
ADS1204
www.ti.com ........................................................................................................................................... SBAS301C – OCTOBER 2003 – REVISED FEBRUARY 2009
ELECTRICAL CHARACTERISTICS (continued)
Over recommended operating free-air temperature range at – 40 ° C to +105 ° C, AV
DD
= 5V, BV
DD
= 3V, CH x+ = 0.5V to 4.5V,
CH x – = 2.5V, REFIN = REFOUT = internal +2.5V, CLKIN = 20MHz, and 16-bit Sinc
3
filter with decimation by 256, unless
otherwise noted.
ADS1204
PARAMETER TEST CONDITIONS MIN TYP
(1)
MAX UNIT
DIGITAL INPUTS
(7)
Logic family LVCMOS
V
IH
High-level input voltage BV
DD
= 3.6V 2 BV
DD
+ 0.3 V
V
IL
Low-level input voltage BV
DD
= 2.7V – 0.3 0.8 V
I
IN
Input current V
I
= BV
DD
or GND ± 50 nA
C
I
Input capacitance 5 pF
DIGITAL OUTPUTS
(7)
Logic family LVCMOS
V
OH
High-level output voltage BV
DD
= 2.7V, I
OH
= – 100 µ A BV
DD
– 0.2 V
V
OL
Low-level output voltage BV
DD
= 2.7V, I
OL
= +100 µ A 0.2 V
C
O
Output capacitance 5 pF
C
L
Load capacitance 30 pF
Data format Bit stream
POWER SUPPLY
AV
DD
Analog supply voltage 4.5 5.5 V
Low-voltage levels 2.7 3.6 V
BV
DD
Buffer I/O supply voltage
5V logic levels 4.5 5.5 V
CLKSEL = 1 22.5 30 mA
AI
DD
Analog operating supply current
CLKSEL = 0 22.4 29 mA
BV
DD
= 3V, CLKOUT = 10MHz 4 mA
BI
DD
Buffer I/O operating supply current
BV
DD
= 5V, CLKOUT = 10MHz 4 mA
CLKSEL = 0 122 145 mW
Power dissipation
CLKSEL = 1 112.5 150 mW
(7) Applicable for 3.0V nominal supply: BV
DD
(min) = 2.7V and BV
DD
(max) = 3.6V.
EQUIVALENT INPUT CIRCUITS
NOTE: The thermal pad is internally connected to the substrate. This pad can be connected to the analog ground or left floating. Keep the
thermal pad separate from the digital ground, if possible.
Copyright © 2003 – 2009, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s): ADS1204