Datasheet

ADS1118
SBAS457D –OCTOBER 2010–REVISED OCTOBER 2013 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Maximum and minimum specifications are at T
A
= –40°C to +125°C, unless otherwise noted. Typical values are at T
A
=
+25°C. All specifications are at VDD = 3.3 V, data rate = 8 SPS, and full-scale (FS) = ±2.048 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DIGITAL INPUT/OUTPUT
Logic level
V
IH
0.7 VDD VDD V
V
IL
GND 0.2 VDD V
V
OH
I
OH
= 1 mA 0.8 VDD V
V
OL
I
OL
= 1 mA GND 0.2 VDD V
Input leakage
I
H
V
IH
= 5.5 V ±10 μA
I
L
V
IL
= GND ±10 μA
POWER-SUPPLY REQUIREMENTS
Power-supply voltage 2 5.5 V
Power-down current at T
A
= +25°C 0.5 2 μA
Power-down current up to T
A
= +125°C 5 μA
Supply current
Operating current at T
A
= +25°C 150 200 μA
Operating current up to T
A
= +125°C 300 μA
VDD = 5.0 V 0.9 mW
Power dissipation VDD = 3.3 V 0.5 mW
VDD = 2.0 V 0.3 mW
TEMPERATURE
Storage temperature –60 +150 °C
Specified temperature –40 +125 °C
THERMAL INFORMATION
ADS1118
THERMAL METRIC
(1)
MSOP (DGS) QFN (RUG) UNITS
10 PINS 10 PINS
θ
JA
Junction-to-ambient thermal resistance 186.8 245.2
θ
JCtop
Junction-to-case (top) thermal resistance 51.5 69.3
θ
JB
Junction-to-board thermal resistance 108.4 172.0
°C/W
ψ
JT
Junction-to-top characterization parameter 2.7 8.2
ψ
JB
Junction-to-board characterization parameter 106.5 170.8
θ
JCbot
Junction-to-case (bottom) thermal resistance n/a n/a
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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