Datasheet

ADC122S051
SNAS257E NOVEMBER 2004REVISED MARCH 2013
www.ti.com
ADC122S051/ADC122S051Q Converter Electrical Characteristics
(1)(2)
The following specifications apply for V
A
= +2.7V to 5.25V, GND = 0V, f
SCLK
= 3.2 MHz to 8 MHz, f
SAMPLE
= 200 ksps to 500
ksps, C
L
= 35 pF unless otherwise noted. Boldface limits apply for T
A
= T
MIN
to T
MAX
: all other limits T
A
= 25°C.
Limits
Symbol Parameter Conditions Typical Units
(3)
STATIC CONVERTER CHARACTERISTICS
Resolution with No Missing Codes 12 Bits
INL Integral Non-Linearity ±0.5 ±1.1 LSB (max)
+0.7 1.3 LSB (max)
DNL Differential Non-Linearity
0.4 1.0 LSB (min)
V
OFF
Offset Error +0.3 ±1.3 LSB (max)
OEM Channel to Channel Offset Error Match ±0.1 ±1.0 LSB (max)
FSE Full Scale Error 0.5 ±1.5 LSB (max)
Channel to Channel Full-Scale Error
FSEM +0.01 ±1.0 LSB (max)
Match
DYNAMIC CONVERTER CHARACTERISTICS
V
A
= +2.7 to 5.25V
SINAD Signal-to-Noise Plus Distortion Ratio 72 69.2 dB (min)
f
IN
= 40.2 kHz, 0.02 dBFS
V
A
= +2.7 to 5.25V
SNR Signal-to-Noise Ratio 72.5 70.6 dB (min)
f
IN
= 40.2 kHz, 0.02 dBFS
V
A
= +2.7 to 5.25V
THD Total Harmonic Distortion 84 75 dB (max)
f
IN
= 40.2 kHz, 0.02 dBFS
V
A
= +2.7 to 5.25V
SFDR Spurious-Free Dynamic Range 86 76 dB (min)
f
IN
= 40.2 kHz, 0.02 dBFS
ENOB Effective Number of Bits V
A
= +2.7 to 5.25V 11.7 11.2 Bits (min)
V
A
= +5.25V
Channel-to-Channel Crosstalk 86 dB
f
IN
= 40.2 kHz
Intermodulation Distortion, Second V
A
= +5.25V,
87 dB
Order Terms f
a
= 40.161 kHz, f
b
= 41.015 kHz
IMD
Intermodulation Distortion, Third Order V
A
= +5.25V
88 dB
Terms f
a
= 40.161 kHz, f
b
= 41.015 kHz
V
A
= +5V 11 MHz
FPBW -3 dB Full Power Bandwidth
V
A
= +3V 8 MHz
ANALOG INPUT CHARACTERISTICS
V
IN
Input Range 0 to V
A
V
I
DCL
DC Leakage Current ±0.02 ±1 µA (max)
Track Mode 33 pF
C
INA
Input Capacitance
Hold Mode 3 pF
DIGITAL INPUT CHARACTERISTICS
V
A
= +5.25V 2.4 V (min)
V
IH
Input High Voltage
V
A
= +3.6V 2.1 V (min)
V
IL
Input Low Voltage 0.8 V (max)
I
IN
Input Current V
IN
= 0V or V
IN
= V
A
±0.02 ±10 µA (max)
C
IND
Digital Input Capacitance 2 4 pF (max)
DIGITAL OUTPUT CHARACTERISTICS
I
SOURCE
= 200 µA V
A
0.03 V
A
0.5 V (min)
V
OH
Output High Voltage
I
SOURCE
= 1 mA V
A
0.10 V
I
SINK
= 200 µA 0.02 0.4 V (max)
V
OL
Output Low Voltage
I
SINK
= 1 mA 0.1 V
(1) Min/max specification limits are specified by design, test, or statistical analysis.
(2) PPAP (Production Part Approval Process) documentation of the device technology, process and qualification is available from Texas
Instruments upon request.
(3) Tested limits are specified to TI's AOQL (Average Outgoing Quality Level).
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