Datasheet


   
SCES499D − OCTOBER 2003 − REVISED JANUARY 2008
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
recommended operating conditions (see Note 5)
MIN MAX UNIT
V
CC
Supply voltage 1.65 5.5 V
V
I/O
I/O port voltage 0 V
CC
V
V
CC
= 1.65 V to 1.95 V V
CC
× 0.65
V
IH
High-level input voltage, control input
V
CC
= 2.3 V to 2.7 V V
CC
× 0.7
V
V
IH
High-level input voltage, control input
V
CC
= 3 V to 3.6 V
V
CC
× 0.7
V
V
CC
= 4.5 V to 5.5 V V
CC
× 0.7
V
CC
= 1.65 V to 1.95 V V
CC
× 0.35
V
IL
Low-level input voltage, control input
V
CC
= 2.3 V to 2.7 V V
CC
× 0.3
V
V
IL
Low-level input voltage, control input
V
CC
= 3 V to 3.6 V
V
CC
× 0.3
V
V
CC
= 4.5 V to 5.5 V V
CC
× 0.3
V
I
Control input voltage 0 5.5 V
V
CC
= 1.65 V to 1.95 V 20
∆t/∆v
Input transition rise/fall time
V
CC
= 2.3 V to 2.7 V 20
ns/V
∆t/∆v Input transition rise/fall time
V
CC
= 3 V to 3.6 V
10
ns/V
V
CC
= 4.5 V to 5.5 V 10
T
A
Operating free-air temperature −40 125 °C
NOTE 6: All unused inputs of the device must be held at V
CC
or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER TEST CONDITIONS
V
CC
MIN
TYP
†
MAX UNIT
V = V or GND,
I
S
= 4 mA 1.65 V 12 35
r
on
On-state switch resistance
V
I
= V
CC
or GND,
V
C
= V
IH
I
S
= 8 mA 2.3 V 9 30
Ω
r
on
On-state switch resistance
ICC
V
C
= V
IH
(see Figure 1)
I
S
= 16 mA 3 V 9 30
Ω
(see Figure 1)
I
S
= 16 mA 4.5 V 5.5 25
V = V to GND,
I
S
= 4 mA 1.65 V 74.5 165
r
on(p)
Peak on resistance
V
I
= V
CC
to GND,
V
C
= V
IH
I
S
= 8 mA 2.3 V 20 60
Ω
r
on(p)
Peak on resistance
ICC
V
C
= V
IH
(see Figure 1)
I
S
= 16 mA 3 V 12.5 35
Ω
(see Figure 1)
I
S
= 16 mA 4.5 V 7.5 25
I
S(off)
Off-state switch leakage current
V
I
= V
CC
and V
O
= GND or
V
I
= GND and V
O
= V
CC
,
5.5 V
±1
A
I
S(off)
Off-state switch leakage current
ICC O
V
I
= GND and V
O
= V
CC
,
V
C
= V
IL
(see Figure 2)
5.5 V
±0.1
†
µA
I
S(on)
On-state switch leakage current
V
I
= V
CC
or GND, V
C
= V
IH
, V
O
= Open
5.5 V
±1
A
I
S(on)
On-state switch leakage current
V
I
= V
CC
or GND, V
C
= V
IH
, V
O
= Open
(see Figure 3)
5.5 V
±0.1
†
µA
I
I
Control input current
V
C
= V
CC
or GND
5.5 V
±1
A
I
I
Control input current V
C
= V
CC
or GND 5.5 V
±0.1
†
µA
I
CC
Supply current
V
C
= V
CC
or GND
5.5 V
10
A
I
CC
Supply current V
C
= V
CC
or GND 5.5 V
1
†
µA
∆I
CC
Supply current change V
C
= V
CC
− 0.6 V 5.5 V 500 µA
C
ic
Control input capacitance 5 V 2 pF
C
io(off)
Switch input/output capacitance 5 V 6 pF
C
io(on)
Switch input/output capacitance 5 V 13 pF
†
T
A
= 25°C