User's Guide

ATOP3.5G Product Description
80447ST10636A rev.10 – 2015-03-03
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Mod. 0808 2011-07 Rev.2
15.3 Reliability qualification
ATOP is qualified according to AEC-Q100 Grade 3. The qualification is done in accordance with
the concept of "Robustness Validation". Reliability tests used are compliant with those as
described in AEC-Q100.
The basis for Robustness Validation is the “Mission Profile”, reflecting the specific use case of a
device (application, location, and environment) and the associated stress factors. The Mission
Profile used for ATOP is “Dashboard application” in a car. The qualification strategy, based on the
Mission Profile includes so-called extended read points, meaning that the reliability stress tests
are not stopped after the required read point needed to determine fit for use, but in some cases
are extended up to twice the required read point, in order to determine the reliability margin.
Table 33 presents in more details the tests performed to guarantee module lifetime.
Table 33 Electrical and environmental qualification
Test Abbreviation Conditions Description
Characterization and performance-related test methods
Electrical
characterization
CHAR
T
amb
= 40 °C to +85 °C
Electromagnetic
compatibility
EMC according to IEC 62132-
4,
IEC 61967-4, LIN EMC
test specification
Operational and environmental test methods
High temperature
operational life (HTOL)
ERF based on worst case Stress test accelerating the operational intrinsic
lifetime of semiconductor devices. Also in this case
operation means that the device is in an application
like environment: supply voltage, supply and output
current, input signals, output loads. The acceleration
is achieved by temperature (normally at maximal
junction temperature inside the packaged device),
but supply voltage and sometimes current can be
used too. Failure modes are typically wear out
related: electro migration, gate oxide breakdown,
transistor threshold voltage shifting or transistor
characteristic degradation due to hot carriers or
negative bias instability, mobile ions.
IFR applicative case, biased,
Tja = 85 °C
High temperature
storage life
HTSL T
amb
= 125 °C Environment stress simulating storage and
accelerating intermetallic bonding fracture failures at
high temperatures (without supply).
Moisture sensitive level
assessment
MSLA 2 reflows Methodology to determine the moisture sensitivity for
Surface Mount Devices (SMD) in relation to PCB
assembly by Hot Convection reflow.
Unbiased HAST (Highly
Accelerated Steam Test)
UHST
T
amb
= 110 °C / 85 % RH
Preferred
unbiased humidity stress test to investigate
endurance of the product regarding internal corrosion
and leakage formation by transport of ions/water.
Typical for standoff without voltage supply.
Temperature humidity
test
THB
T
amb
= 85 °C / 85 % RH /
V biased
Preferred biased humidity stress to investigate
endurance of the product regarding internal corrosion
and leakage formation by transport of ions/water.
Typical for standoff with voltage supply on.