Integration Manual

Table Of Contents
TOBY-L3 series - System Integration Manual
TSD-19090601 - R13 System Integration Manual Page 93 of 143
Provide a 100 nF bypass capacitor (e.g. Murata GRM155R71C104K) at the SIM supply line close to the
relative pad of the SIM chip, to prevent digital noise.
Provide a bypass capacitor of about 22 pF to 47 pF (e.g. Murata GRM1555C1H470J) on each SIM line,
to prevent RF coupling especially when the RF antenna is placed closer than 10 - 30 cm from the SIM
lines.
Limit the capacitance and series resistance on each SIM signal to match the SIM requirements (23 ns is
the max rise time on the clock line, 1 µs is the max rise time on the data and reset lines).
TOBY-L3 series
VSIMx
SIMx_IO
SIMx_CLK
SIMx_RST
SIM CHIP
SIM Chip
Bottom View
(contacts side)
C1
VPP (C6)
VCC (C1)
IO (C7)
CLK (C3)
RST (C2)
GND (C5)
C2 C3 C5
U1
C4
2
8
3
6
7
1
C1 C5
C2 C6
C3 C7
C4 C8
8
7
6
5
1
2
3
4
Figure 37: Application circuits for the connection to a single solderable SIM chip, with SIM detection not implemented
Reference
Description
Part Number - Manufacturer
C1, C2, C3, C4
47 pF Capacitor Ceramic C0G 0402 5% 50 V
GRM1555C1H470JA01 - Murata
C5
100 nF Capacitor Ceramic X7R 0402 10% 16 V
GRM155R71C104KA01 - Murata
U1
SIM chip (M2M UICC Form Factor)
Various Manufacturers
Table 31: Example of components for the connection to a single solderable SIM chip, with SIM detection not implemented