Datasheet

TSM950N10CW
Taiwan Semiconductor
4 Version: D1807
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Continuous Drain Current vs. T
C
Gate Charge
On-Resistance vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
0
2
4
6
8
25 50 75 100 125 150
0
2
4
6
8
10
0 2 4 6 8 10
ID=5A
VDS=48V
0.6
0.9
1.2
1.5
1.8
2.1
-50 0 50 100 150
0.5
0.7
0.9
1.1
1.3
-50 0 50 100 150
V
GS
,
Gate to Source Voltage (V)
Qg, Gate Charge (nC)
I
D
, Continuous Drain Current (A)
T
C
, Case Temperature (°C)
Normalized Gate Threshold Voltage
T
J
, Junction Temperature (°C)
Normalized On Resistance
T
J
, Junction Temperature (°C)
I
D
,
Drain Current (A)
V
DS
, Drain to Source Voltage (V)
Normalized Effective Transient
Thermal Impedance, Z
ӨJC
t, Square Wave Pulse Duration (sec)
0.01
0.1
1
10
100
0.1 1 10 100
R
DS(ON)
SINGLE PULSE
R
ӨJC
=14°C/W
T
C
=25
°
C
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
SINGLE PULSE
R
ӨJC
=14°C/W
Duty=0.5
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC