Datasheet

TSM950N10CW
Taiwan Semiconductor
1 Version: D1807
N-Channel Power MOSFET
100V, 6.5A, 95mΩ
FEATURES
● Fast switching
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound
APPLICATION
● Networking
● Load Switch
● Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
V
DS
100
V
R
DS(on)
(max)
V
GS
= 10V
95
mΩ
V
GS
= 4.5V
110
Q
g
9.3
nC
SOT-223
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
(Note 1)
T
C
= 25°C
I
D
6.5
A
T
C
= 100°C
4.1
Pulsed Drain Current
(Note 2)
I
DM
26
A
Total Power Dissipation @ T
C
= 25°C
P
DTOT
9
W
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
R
ӨJC
14
°C/W
Junction to Ambient Thermal Resistance
R
ӨJA
62
°C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJC
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air