Datasheet
TSM900N06
60V N-Channel Power MOSFET
2/8 Version: C1612
Thermal Performance
Parameter
Symbol
Limit
Unit
IPAK
DPAK
SOT-223
Thermal Resistance - Junction to Case
R
ӨJC
5
5
30
°C/W
Thermal Resistance - Junction to Ambient
R
ӨJA
62
62
70
°C/W
Electrical Specifications (T
C
= 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250µA
BV
DSS
60
--
--
V
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 6A
R
DS(ON)
--
76
90
mΩ
V
GS
= 4.5V, I
D
= 3A
--
87
100
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
V
GS(TH)
1.2
1.8
2.5
V
Zero Gate Voltage Drain Current
V
DS
= 60V, V
GS
= 0V
I
DSS
--
--
1
µA
V
DS
= 48V, T
J
= 125°C
--
--
10
Gate Body Leakage
V
GS
= ±20V, V
DS
= 0V
I
GSS
--
--
±100
µA
Forward Transconductance
V
DS
= 10V, I
D
= 3A
g
fs
--
4
--
S
Dynamic
Total Gate Charge
(Note 4,5)
V
DS
= 48V, I
D
= 6A,
V
GS
= 10V
Q
g
--
9.3
--
nC
Gate-Source Charge
(Note 4,5)
Q
gs
--
2.1
--
Gate-Drain Charge
(Note 4,5)
Q
gd
--
1.8
--
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
C
iss
--
500
--
pF
Output Capacitance
C
oss
--
45
--
Reverse Transfer Capacitance
C
rss
--
16
--
Gate Resistance
V
GS
=0V, V
DS
=0V, f=1MHz
R
g
--
2
--
Ω
Switching
Turn-On Delay Time
(Note 4,5)
V
DD
= 30V , V
GS
= 10V ,
R
G
= 3.3, I
D
= -1A
t
d(on)
--
2.9
--
ns
Turn-On Rise Time
(Note 4,5)
t
r
--
9.5
--
Turn-Off Delay Time
(Note 4,5)
t
d(off)
--
18.4
--
Turn-Off Fall Time
(Note 4,5)
t
f
--
5.3
--
Source-Drain Diode Ratings and Characteristic
Continuous Drain-Source Diode
V
G
= V
D
= 0V, Force Current
I
S
--
--
11
A
Pulse Drain-Source Diode
I
SM
--
--
44
A
Diode-Source Forward Voltage
V
GS
= 0V, I
S
= 1A
V
SD
--
--
1.2
V
Reverse Recovery Time
(Note 4)
V
GS
= 30V, I
S
= 1A
dI
F
/dt = 100A/µs
t
rr
--
23.2
--
ns
Reverse Recovery Charge
(Note 4)
Q
rr
--
14.3
--
nC
Note:
1. Limited by maximum junction temperature.
2. Repetitive Rating : Pulsed width limited by maximum junction temperature.
3. V
DD
=25V,V
GS
=10V,L=1mH,I
AS
=7A.,R
G
=25,Starting T
J
= 25°C
4. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
5. Essentially independent of operating temperature.