Datasheet

TSM4953D
30V Dual P-Channel MOSFET
Document Number: DS_P0000106 2 Version: D15
Electrical Specifications (Ta = 25°C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= -250uA BV
DSS
-30 -- --
V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250µA V
GS(TH)
-1.0 -1.5 -3.0
V
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±100
nA
Zero Gate Voltage Drain Current V
DS
= -24V, V
GS
= 0V I
DSS
-- -- -1.0
µA
On-State Drain Current
a
V
DS
=-5V, V
GS
= -10V I
D(ON)
-6 -- --
A
Drain-Source On-State Resistance
a
V
GS
= -10V, I
D
= -4.9A
R
DS(ON)
-- 50 60
mΩ
V
GS
= -4.5V, I
D
= -3.7A -- 75 90
Forward Transconductance
a
V
DS
= -15V, I
D
= -4.9A g
fs
-- 10 --
S
Diode Forward Voltage I
S
= -1.9A, V
GS
= 0V V
SD
-- -- -1.3 V
Dynamic
Total Gate Charge
V
DS
= -15V, I
D
= -4.9A,
V
GS
= -10V
Q
g
-- 28 --
nC
Gate-Source Charge Q
gs
-- 3 --
Gate-Drain Charge Q
gd
-- 7 --
Input Capacitance
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 745 --
pF
Output Capacitance C
oss
-- 440 --
Reverse Transfer Capacitance C
rss
-- 120 --
Switching
Turn-On Delay Time
V
DD
= -15V, R
L
= 15Ω,
I
D
= -1A, V
GEN
= -10V,
R
G
= 6Ω
t
d(on)
--
9
--
nS
Turn-On Rise Time t
r
-- 15 --
Turn-Off Delay Time t
d(off)
-- 75 --
Turn-Off Fall Time t
f
-- 40 --
Notes:
1. pulse test: PW
≤
300µS, duty cycle
≤
2%
2. For DESIGN AID ONLY, not subject to production testing.
3. Switching time is essentially independent of operating temperature.