Datasheet

TSM4953D
30V Dual P-Channel MOSFET
Document Number: DS_P0000106 1 Version: D15
SOP
-
8
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
-30
60 @ V
GS
= 10V -4.9
90 @ V
GS
= 4.5V -3.7
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM4953DCS RLG SOP-8 2.5Kpcs / 13” Reel
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
-30 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current, V
GS
@4.5V. I
D
-4.9 A
Pulsed Drain Current, V
GS
@4.5V I
DM
-20 A
Continuous Source Current (Diode Conduction)
a,b
I
S
-2.6 A
Maximum Power Dissipation
Ta = 25°C
P
D
2.5
W
Ta = 70°C 1.3
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
40 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
62.5 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Pin
Definition
:
1. Source 1 8. Drain 1
2. Gate 1 7. Drain 1
3. Source 2 6. Drain 2
4. Gate 2 5. Drain 2
Dual P-Channel MOSFET