Datasheet

TSM3446
20V N-Channel MOSFET
Document Number: DS_P0000078 1 Version: E15
SOT
-
26
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM3446CX6 RFG SOT-26 3Kpcs / 7” Reel
TSM3446CX6 RKG SOT-26 10Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current, V
GS
@4.5V. I
D
5.3 A
Pulsed Drain Current, V
GS
@4.5V I
DM
20 A
Continuous Source Current (Diode Conduction)
a,b
I
S
1.7 A
Maximum Power Dissipation
Ta = 25
o
C
P
D
2.0
W
Ta = 70
o
C 1.3
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
30 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
80 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
20
33 @ V
GS
= 4.5V 5.3
40 @ V
GS
= 2.5V 4.4
Pin
Definition
:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
Block Diagram
N-Channel MOSFET