Datasheet

TSM3443
20V P-Channel MOSFET
Document Number: DS_P0000077 2 Version: F15
Electrical Specifications (T
A
= 25°C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= -250uA BV
DSS
-20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250µA V
GS(TH)
-0.5 -- -1.4 V
Gate Body Leakage V
GS
= ±12V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= -20V, V
GS
= 0V I
DSS
-- -- -1.0 µA
On-State Drain Current
a
V
DS
=-5V, V
GS
= -4.5V I
D(ON)
-15 -- -- A
Drain-Source On-State Resistance
a
V
GS
= -4.5V, I
D
= -4.7A
R
DS(ON)
-- 48 60
mΩ
V
GS
= -2.5V, I
D
= -3.8A -- 80 100
Forward Transconductance
a
V
DS
= -10V, I
D
= -4.7A g
fs
-- 11 -- S
Diode Forward Voltage I
S
= -1.7A, V
GS
= 0V V
SD
-- -0.8 -1.2 V
Dynamic
2
Total Gate Charge
V
DS
= -10V, I
D
= -4.7A,
V
GS
= -4.5V
Q
g
-- 6 9
nC
Gate-Source Charge Q
gs
-- 1.4 --
Gate-Drain Charge Q
gd
-- 1.9 --
Input Capacitance
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 640 --
pF
Output Capacitance C
oss
-- 180 --
Reverse Transfer Capacitance C
rss
-- 90 --
Switching
3
Turn-On Delay Time
V
DD
= -10V, R
L
= 10Ω,
I
D
= -1A, V
GEN
= -4.5V,
R
G
= 6Ω
t
d(on)
-- 22 35
nS
Turn-On Rise Time t
r
-- 35 55
Turn-Off Delay Time t
d(off)
-- 45 70
Turn-Off Fall Time t
f
-- 25 50
Note 1: Pulse test: P
W
≤
300µS, duty cycle
≤
2%
Note 2: For DESIGN AID ONLY, not subject to production testing.
Note 3: Switching time is essentially independent of operating temperature.