Datasheet

TSM260P02
Taiwan Semiconductor
Document Number: DS_P0000208 4 Version: C1807
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Continuous Drain Current vs. T
C
Gate Charge
On-Resistance vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
Square Wave Pulse Duration (s)
-V
DS
, Drain to Source Voltage (V)
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Qg, Gate Charge (nC)
T
C
, Case Temperature (°C)
-VGS, Gate to Source Voltage (V)
-I
D
, Continuous Drain Current (A)
Normalized On Resistance
Normalized Gate Threshold Voltage
Normalized Thermal Response
-I
D
, Drain Current (A)