Datasheet

TSM260P02
Taiwan Semiconductor
Document Number: DS_P0000208 2 Version: C1807
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
(Note 2)
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= -250µA
BV
DSS
-20
--
--
V
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250µA
V
GS(TH)
-0.3
-0.6
-1.0
V
Gate Body Leakage
V
GS
= ±10V, V
DS
= 0V
I
GSS
--
--
±100
nA
Zero Gate Voltage Drain Current
V
DS
= -20V, V
GS
= 0V
I
DSS
--
--
-1
µA
V
DS
= -16V, T
J
= 125ºC
--
--
-10
Drain-Source On-State Resistance
V
GS
= -4.5V, I
D
= -5A
R
DS(on)
--
21
26
mΩ
V
GS
= -2.5V, I
D
= -4A
--
26
32
V
GS
= -1.8V, I
D
= -3A
--
32
40
Forward Transconductance
V
DS
= -10V, I
S
= -5A
g
fs
--
15
--
S
Dynamic
(Note 3)
Total Gate Charge
V
DS
= -10V, I
D
= -5A,
V
GS
=- 4.5V
Q
g
--
19.5
--
nC
Gate-Source Charge
Q
gs
--
2
--
Gate-Drain Charge
Q
gd
--
3.6
--
Input Capacitance
V
DS
= -15V, V
GS
= 0V,
F = 1.0MHz
C
iss
--
1670
--
pF
Output Capacitance
C
oss
--
220
--
Reverse Transfer Capacitance
C
rss
--
120
--
Switching
Turn-On Delay Time
V
DD
= -10V, I
D
= -1A,
V
GS
= -4.5V,
R
GEN
=25Ω
t
d(on)
--
10.4
--
ns
Turn-On Rise Time
t
r
--
37.5
--
Turn-Off Delay Time
t
d(off)
--
89.1
--
Turn-Off Fall Time
t
f
--
24.6
--
Source-Drain Diode
Forward Voltage
V
GS
= 0V, I
S
= -1A
V
SD
--
--
-1
V
Continuous Forward Current
Integral reverse diode
in the MOSFET
I
S
--
--
-6.5
A
Pulse Forward Current
I
SM
--
--
-26
A
Notes:
1. Pulse width limited by safe operating area
2. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
3. Switching time is essentially independent of operating temperature.