Datasheet

TSM2323
20V P-Channel MOSFET
Document Number: DS_P0000058 2 Version: F15
Electrical Specifications
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= - 250uA BV
DSS
-20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= - 250uA V
GS(TH)
-0.4 -- -1.0 V
Zero Gate Voltage Drain Current V
DS
= -16V, V
GS
= 0V I
DSS
-- -- -1.0 uA
Gate Body Leakage V
GS
= ±8V, V
DS
= 0V I
GSS
-- -- ±100 nA
On-State Drain Current V
DS
≤-5V, V
GS
= -4.5V I
D(ON)
-20 -- -- A
Drain-Source On-State Resistance
V
GS
= -4.5V, I
D
= -4.7A
R
DS(ON)
-- 31 39
mΩ V
GS
= -2.5V, I
D
= -4.1A -- 41 52
V
GS
= -1.8V, I
D
= -2.0A -- 54 68
Forward Transconductance V
DS
= - 5V, I
D
= - 4.7A g
fs
-- 16 -- S
Diode Forward Voltage I
S
= - 1.0A, V
GS
= 0V V
SD
-- - 0.7 -1.2 V
Dynamic
b
Total Gate Charge
V
DS
= -10V, I
D
= -4.7A,
V
GS
= -4.5V
Q
g
-- 12.5 19
nC
Gate-Source Charge Q
gs
-- 1.7 --
Gate-Drain Charge Q
gd
-- 3.3 --
Input Capacitance
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 1020 --
pF
Output Capacitance C
oss
-- 191 --
Reverse Transfer Capacitance C
rss
-- 140 --
Switching
b,C
Turn-On Delay Time
V
DD
= -10V, R
L
= 10Ω,
I
D
= -1A, V
GEN
= -4.5V,
R
G
= 6Ω
t
d(on)
-- 25 40
nS
Turn-On Rise Time t
r
-- 43 65
Turn-Off Delay Time t
d(off)
-- 71 110
Turn-Off Fall Time t
f
-- 48 75
Notes:
a. pulse test: PW ≤ 300µS, duty cycle ≤ 2%
b. Guaranteed by design of component.
c. Switching time is essentially independent of operating temperature.