Datasheet

TSM2312
20V N-Channel MOSFET
Document Number: DS_P0000054 2 Version: E15
Electrical Specifications
Parameter Conditions Symbol Min Typ Max Unit
Static
(Note 3)
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
0.45 0.65 1.0 V
Gate Body Leakage V
GS
= ±8V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= 16V, V
GS
= 0V I
DSS
-- -- 1.0 μA
On-State Drain Current V
DS
=10V, V
GS
= 4.5V I
D(ON)
15 -- -- A
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 4.9A
R
DS(ON)
-- 27 33
mΩ V
GS
= 2.5V, I
D
= 4.4A -- 33 40
V
GS
= 1.8V, I
D
= 3.9A -- 42 51
Forward Transconductance V
DS
= 15V, I
D
= 5.0A g
fs
-- 40 -- S
Diode Forward Voltage I
S
= 1.0A, V
GS
= 0V V
SD
-- 0.8 1.2 V
Dynamic
(Note 4)
Total Gate Charge
V
DS
= 10V, I
D
= 5.0A,
V
GS
= 4.5V
Q
g
-- 11 14
nC
Gate-Source Charge Q
gs
-- 1.5 --
Gate-Drain Charge Q
gd
-- 2.1 --
Input Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 500 --
pF
Output Capacitance C
oss
-- 300 --
Reverse Transfer Capacitance C
rss
-- 140 --
Switching
(Note 5)
Turn-On Delay Time
V
DD
= 10V, R
L
= 10Ω,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6Ω
t
d(on)
-- 15 25
ns
Turn-On Rise Time t
r
-- 40 60
Turn-Off Delay Time t
d(off)
-- 48 70
Turn-Off Fall Time t
f
-- 31 45
Notes:
1. Pulse width limited by the maximum junction temperature
2. Surface Mounted on FR4 Board t ≤ 5 sec.
3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
4. For DESIGN AID ONLY, not subject to production testing.
5. Switching time is essentially independent of operating temperature.