Datasheet

TSM2312
20V N-Channel MOSFET
Document Number: DS_P0000054 1 Version: E15
SO
T
-
23
Key Parameter Performance
Parameter Value Unit
V
DS
20 V
R
DS(on)
(max)
V
GS
= 4.5V 33
mΩ V
GS
= 2.5V 40
V
GS
= 1.8V 51
Q
g
11 nC
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM2312CX RFG SOT-23 3,000pcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds
Absolute Maximum Ratings (T
C
= 25°C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
20 V
Gate-Source Voltage V
GS
±8 V
Continuous Drain Current I
D
4.9 A
Pulsed Drain Current
(Note 1)
I
DM
15 A
Continuous Source Current (Diode Conduction)
(Note 2)
I
S
1.0 A
Maximum Power Dissipation
Ta = 25°C
P
D
0.75
W
Ta = 75°C 0.48
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance Junction to Lead R
ӨJL
75 °C/W
Thermal Resistance Junction to Ambient R
ӨJA
140 °C/W
N-Channel MOSFET
Pin
Definition
:
1. Gate
2. Source
3. Drain