Datasheet

TSM2308
60V N-Channel MOSFET
Document Number: DS_P0000049 2 Version: C15
Electrical Specifications (Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA BV
DSS
60 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
1.2 -- 2.5 V
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= 48V, V
GS
= 0V I
DSS
-- -- 1.0 µA
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 3A
R
DS(ON)
-- 130 156
mΩ
V
GS
= 4.5V, I
D
= 2A -- 160 192
Diode Forward Voltage I
S
= 1A, V
GS
= 0V V
SD
-- -- -1.2 V
Dynamic
b
Total Gate Charge
V
DS
= 48V, I
D
= 3A,
V
GS
= 4.5V
Q
g
-- 3.99 --
nC
Gate-Source Charge Q
gs
-- 1.31 --
Gate-Drain Charge Q
gd
-- 1.78 --
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 511 --
pF
Output Capacitance C
oss
-- 38 --
Reverse Transfer Capacitance C
rss
-- 25 --
Switching
b.c
Turn-On Delay Time
V
DD
= 30V, I
D
= 3A, V
GEN
= 10V, R
G
= 3.3Ω
t
d(on)
-- 5.3 --
nS
Turn-On Rise Time t
r
-- 17.5 --
Turn-Off Delay Time t
d(off)
-- 14.2 --
Turn-Off Fall Time t
f
-- 2.4 --
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.