Datasheet

TSM2302CX
Taiwan Semiconductor
4 Version: E1608
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
I
S
, Reverse Drain Current (A)
V
SD
, Body Diode Forward Voltage (V)
Normalized Effective Transient
Thermal Impedance, Z
ӨJC
t, Square Wave Pulse Duration (sec)
C, Capacitance (pF)
V
DS
, Drain to Source Voltage (V)
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature (°C)
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
0
100
200
300
400
500
600
700
800
900
1000
0 4 8 12 16 20
CISS
COSS
CRSS
0.8
0.9
1
1.1
1.2
-75 -50 -25 0 25 50 75 100 125 150
I
D
=250uA
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2
25℃
150℃
-55℃
0.01
0.1
1
10
100
0.1 1 10 100
R
DS(ON)
100us
1ms
10ms
DC
SINGLE PULSE
R
ӨJC
=84°C/W
T
C
=25
°
C
100ms
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
R
ӨJC
=84°C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC